JMnic Product Specification
Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B
DESCRIPTION
・With TO-220 package
・Complement to type 2SC2336,
2SC2336A,2SC2336B
APPLICATIONS
・Audio frequency power amplifier
・High frequency power amplifier
PINNING
PIN DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3 Base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA1006 -180
2SA1006A -200
V
CBO
Collector-base voltage
2SA1006B
Open emitter
-250
V
2SA1006 -180
2SA1006A -200
V
CEO
Collector-emitter voltage
2SA1006B
Open base
-250
V
V
EBO
Emitter-base voltage Open collector -5 V
I
C
Collector current -1.5 A
I
CM
Collector current-Peak -3.0 A
T
a
=25℃
1.5
P
T
Total power dissipation
T
C
=25℃
25
W
T
j
Junction temperature 150
℃
T
stg
Storage temperature -55~150
℃
Fig.1 simplified outline (TO-220) and symbol
JMnic Product Specification
2
Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEsat
Collector-emitter saturation voltage I
C
=-0.5A; I
B
=-50mA -1.0 V
V
BEsat
Base-emitter saturation voltage I
C
=-0.5A ;I
B
=-50mA -1.5 V
I
CBO
Collector cut-off current V
CB
=-150V ;I
E
=0 -1
μA
I
EBO
Emitter cut-off current V
EB
=-3V; I
C
=0 -1
μA
h
FE-1
DC current gain I
C
=-5mA ; V
CE
=-5V 30
h
FE-2
DC current gain I
C
=-150mA ; V
CE
=-5V 60 320
C
ob
Output capacitance I
E
=0 ; V
CB
=-10V,f=1MHz 45 pF
f
T
Transition frequency I
C
=-100mA ; V
CE
=10V 80 MHz
h
FE-2
Classifications
R Q P
60-120 100-200 160-320