JMnic Product Specification
Silicon PNP Power Transistors 2SA1096 2SA1096A
DESCRIPTION ・
・With TO-126 package
・Complement to type 2SC2497/2SC2497A
APPLICATIONS
・For low-frequency power amplification
PINNING
PIN DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3 Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
Collector-base voltage Open emitter
-70
V
2SA1096 -50
V
CEO
Collector- emitter voltage
2SA1096A
Open base
-60
V
V
EBO
Emitter-base voltage Open collector -5 V
I
C
Collector current -2 A
I
CM
Collector current-peak -3 A
1.2*
1
P
D
Total power dissipation T
C
=25℃
5*
2
W
T
j
Junction temperature 150
℃
T
stg
Storage temperature
-55～+150 ℃
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
JMnic Product Specification
2
Silicon PNP Power Transistors 2SA1096 2SA1096A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA1096 -50
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1096A
I
C
=-2mA ; I
B
=0
-60
V
V
(BR)CBO
Collector-base breakdown voltage I
C
=-1mA ;I
E
=0 -70 V
V
CEsat
Collector-emitter saturation voltage I
C
=-1.5A ;I
B
=-0.15A -1.0 V
V
BEsat
Base-emitter saturation voltage I
C
=-1.5A ;I
B
=-0.15A -1.5 V
I
CEO
Collector cut-off current V
CE
=-10V; I
B
=0 -1
μA
I
CBO
Collector cut-off current V
CB
=-20V; I
E
=0 -100
μA
I
EBO
Emitter cut-off current V
EB
=-5V; I
C
=0 -10
μA
h
FE
DC current gain I
C
=-1A ; V
CE
=-5V 80 220
C
OB
Output capacitance I
E
=0 ; V
CB
=-20V,f=1MHz 55 pF
f
T
Transition frequency I
E
=-0.5A ; V
CB
=-5V,f=200MHz 150 MHz
h
FE
Classifications
Q R
80-160 120-220