JMnic Product Specification
Silicon PNP Power Transistors 2SA1069 2SA1069A
DESCRIPTION
・With TO-220 package
・Complement to type 2SC2516/2516A
・Low collector saturation voltage
APPLICATIONS
・Switching regulators
・DC-DC converters
・High-frequency power amplifier
PINNING
PIN DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3 Base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
Collector-base voltage Open emitter -80 V
2SA1069 -60
V
CEO
Collector-emitter voltage
2SA1069A
Open base
-80
V
V
EBO
Emitter-base voltage Open collector -12 V
I
C
Collector current -5 A
I
CM
Collector current-Peak -10 A
I
B
Base current -2.5 A
T
a
=25℃
1.5
P
C
Collector power dissipation
T
C
=25℃
30
W
T
j
Junction temperature 150
℃
T
stg
Storage temperature -55~150
℃
Fig.1 simplified outline (TO-220) and symbol
JMnic Product Specification
2
Silicon PNP Power Transistors 2SA1069 2SA1069A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA1069 -60
V
CEO(SUS)
Collector-emitter
sustaining voltage
2SA1069A
I
C
=-3.0A ,I
B
=-0.3A;L=1mH
-80
V
V
CEsat
Collector-emitter saturation voltage I
C
=-3A; I
B
=-0.3A -0.6 V
V
BEsat
Base-emitter saturation voltage I
C
=-3A; I
B
=-0.3A -1.5 V
2SA1069 V
CB
=-60V; I
E
=0
I
CBO
Collector
cut-off current
2SA1069A V
CB
=-80V; I
E
=0
-10 μA
I
EBO
Emitter cut-off current V
EB
=-5V; I
C
=0 -10
μA
h
FE-1
DC current gain I
C
=-0.3A ; V
CE
=-5V 40
h
FE-2
DC current gain I
C
=-3A ; V
CE
=-5V 40 200
Switching times
t
on
Turn-on time 0.5
μs
t
stg
Storage time 2.5
μs
t
f
Fall time
I
C
=-3A ; V
CC
=-50V
I
B1
=-I
B2
=-0.3A;R
L
=17Ω
0.5
μs
h
FE-2
Classifications
M L K
40-80 60-120 100-200