JMnic Product Specification
Silicon PNP Power Transistors 2SB1604 2SB1604A
DESCRIPTION
・With TO-220F package
・Low collector saturation voltage
・High speed switching
APPLICATIONS
・For low-voltage switching applications
PINNING
PIN DESCRIPTION
1
Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
2SB1604 -40
V
CBO
Collector-base voltage
2SB1604A
Open emitter
-50
V
2SB1604 -20
V
CEO
Collector-emitter voltage
2SB1604A
Open base
-40
V
V
EBO
Emitter-base voltage Open collector -5 V
I
C
Collector current -10 A
I
CM
Collector current-peak -20 A
T
a
=25℃
2
P
C
Collector dissipation
T
C
=25℃
40
W
T
j
Junction temperature 150
℃
T
stg
Storage temperature -55~150
℃
Fig.1 simplified outline (TO-220F) and symbol
JMnic Product Specification
2
Silicon PNP Power Transistors 2SB1604 2SB1604A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SB1604 -20
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB1604A
I
C
=-10mA ;I
B
=0
-40
V
V
CEsat
Collector-emitter saturation voltage I
C
=-10A ;I
B
=-0.33A -0.6 V
V
BEsat
Base-emitter saturation voltage I
C
=-10A ;I
B
=-0.33A -1.5 V
I
CBO
Collector cut-off current V
CB
=-40V; I
E
=0 -50
μA
I
EBO
Emitter cut-off current V
EB
=-5V; I
C
=0 -50
μA
h
FE-1
DC current gain I
C
=-0.1A ; V
CE
=-2V 45
h
FE-2
DC current gain I
C
=-3A ; V
CE
=-2V 90 260
C
OB
Output capacitance I
E
=0 ; V
CB
=-10V;f=1MHz 400 pF
f
T
Transition frequency I
C
=-0.5A ; V
CE
=-10V 100 MHz
Switching times
t
on
Turn-on time 0.1
μs
t
stg
Storage time 0.5
μs
t
f
Fall time
I
C
=-3A; I
B1
=-I
B2
=-0.1A
0.1
μs
h
FE-2
Classifications
Q P
90-180 130-260