TIP32
Rev. H Oct.-2018 DATA SHEET
http://www.fsbrec.com 1 / 6
TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package.
与 TIP31 互补。
Complement to TIP31.
用于中功率线性开关放大。
Medium power linear switching applications.
PIN1：Base PIN 2：Collector PIN 3：Emitter
放大及印章代码 / h
FE
Classifications & Marking
见印章说明。See Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
TIP32
Rev. H Oct.-2018 DATA SHEET
http://www.fsbrec.com 2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
TIP32 TIP32A TIP32B TIP32C
Collector to Base Voltage
V
CBO
-40 -60 -80 -100 V
Collector to Emitter Voltage
V
CEO
-40 -60 -80 -100 V
Emitter to Base Voltage V
EBO
-5.0 V
Collector Current-Continuous I
C
-3.0 A
Peak Collector Current I
CP
-5.0 A
Base Current - Continuous I
B
-3.0 A
Collector Power Dissipation P
C
2.0 W
Collector Power Dissipation
P
C
(Tc=25℃)
40 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
sag
-55～150 ℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Emitter
Breakdown Voltage
V
CEO
TIP32
I
C
=-30mA I
B
=0
-40
V
TIP32A
-60
TIP32B
-80
TIP32C
-100
Collector Cut-Off Current I
CEO
TIP32
TIP32A
V
CE
=-30V I
B
=0 -0.3
mA
TIP32B
TIP32C
V
CE
=-60V I
B
=0 -0.3
Collector Cut-Off Current I
CES
TIP32
V
CE
=-40V V
EB
=0 -200
μA
TIP32A
V
CE
=-60V V
EB
=0 -200
TIP32B
V
CE
=-80V V
EB
=0 -200
TIP32C
V
CE
=-100V V
EB
=0 -200
Emitter Cut-Off Current I
EBO
V
EB
=-5.0V I
C
=0 -1.0 mA
DC Current Gain
h
FE(1)
V
CE
=-4.0V I
C
=-3.0A 10 50
h
FE(2)
V
CE
=-4.0V I
C
=-1.0A 25
Collector to Emitter
Saturation Voltage
V
CE(sat)
I
C
=-3.0A I
B
=-375mA -1.2 V
Base to Emitter Saturation
V
oltage
V
BE(sat)
I
C
=-3.0A V
CE
=-4.0V -1.8 V
Transition Frequency f
T
V
CE
=-10V I
C
=-500mA 3.0 MHz
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)