TIP31
Rev. H Oct.-2018 DATA SHEET
http://www.fsbrec.com 1 / 6
TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package.
与 TIP32 互补。
Complement to TIP32.
用于中功率线性开关放大。
Medium power linear switching applications.
PIN1：Base PIN 2：Collector PIN 3：Emitter
放大及印章代码 / h
FE
Classifications & Marking
见印章说明。See Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
TIP31
Rev. H Oct.-2018 DATA SHEET
http://www.fsbrec.com 2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
TIP31 TIP31A TIP31B TIP31C
Collector to Base Voltage
V
CBO
40 60 80 100 V
Collector to Emitter Voltage
V
CEO
40 60 80 100 V
Emitter to Base Voltage V
EBO
5.0 V
Collector Current - Continuous I
C
3.0 A
Peak Collector Current I
CP
5.0 A
Base Current - Continuous I
B
1.0 A
Collector Power Dissipation P
C
2.0 W
Collector Power Dissipation
P
C
(Tc=25℃)
40 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
sag
-55～150 ℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Emitter
Breakdown Voltage
V
CEO
TIP31
I
C
=30mA I
B
=0
40
V
TIP31A
60
TIP31B
80
TIP31C
100
Collector Cut-Off Current I
CEO
TIP31
TIP31A
V
CE
=30V I
B
=0 0.3
mA
TIP31B
TIP31C
V
CE
=60V I
B
=0 0.3
Collector Cut-Off Current I
CES
TIP31
V
CE
=40V V
EB
=0 200
μA
TIP31A
V
CE
=60V V
EB
=0 200
TIP31B
V
CE
=80V V
EB
=0 200
TIP31C
V
CE
=100V V
EB
=0 200
Emitter Cut-Off Current I
EBO
V
EB
=5.0V I
C
=0 1.0 mA
DC Current Gain
h
FE(1)
V
CE
=4.0V I
C
=3.0A 10 70
h
FE(2)
V
CE
=4.0V I
C
=1.0A 25
Collector to Emitter
Saturation Voltage
V
CE(sat)
I
C
=3.0A I
B
=375mA 1.2 V
Base to Emitter Voltage V
BE
I
C
=3.0A V
CE
=4.0V 1.8 V
Transition Frequency f
T
V
CE
=10V I
C
=500mA 3.0 MHz
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)