V8PM10
www.vishay.com
Vishay General Semiconductor
Revision: 29-Jan-2019
1
Document Number: 87620
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface-Mount
TMBS
®
(Trench MOS Barrier Schottky) Rectifier
Ultra Low V
F
= 0.50 V at I
F
= 4 A
DESIGN SUPPORT TOOLS
FEATURES
• Very low profile - typical height of 1.1 mm
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2)
Free air, mounted on recommended pad area
(3)
The heat generated must be less than the thermal conductivity from junction to ambient: dP
D
/dT
J
< 1/R
JA
PRIMARY CHARACTERISTICS
I
F(AV)
8 A
V
RRM
100 V
I
FSM
140 A
V
F
at I
F
= 8 A (125 °C) 0.60 V
T
J
max. 175 °C
Package SMPC (TO-277A)
Circuit configuration Single
K
2
1
SMPC (TO-277A)
eSMP
®
Series
Anode 1
Anode 2
Cathode
K
click logo to get started
Available
Models
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V8PM10 UNIT
Device marking code 8M10
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum DC forward current
I
F(AV)
(1)
8
A
I
F(AV)
(2)
3.7
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
140 A
Operating junction temperature range T
J
(3)
-40 to +175 °C
Storage temperature range T
STG
-55 to +175 °C
V8PM10
www.vishay.com
Vishay General Semiconductor
Revision: 29-Jan-2019
2
Document Number: 87620
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dP
D
/dT
J
< 1/R
JA
(2)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient
(3)
Units mounted on 30 mm x 30 mm aluminum PCB, thermal resistance R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 4 A
T
A
= 25 °C
V
F
(1)
0.57 -
V
I
F
= 8 A 0.69 0.75
I
F
= 4 A
T
A
= 125 °C
0.50 -
I
F
= 8 A 0.60 0.66
Reverse current
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
0.01 -
mA
T
A
= 125 °C 1.5 -
V
R
= 100 V
T
A
= 25 °C - 0.06
T
A
= 125 °C 3 8
Typical junction capacitance 4.0 V, 1 MHz C
J
800 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise specified)
PARAMETER SYMBOL V8PM10 UNIT
Typical thermal resistance
R
JA
(1)(2)
75
°C/W
R
JM
(3)
4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
V8PM10-M3/H 0.10 H 1500 7" diameter plastic tape and reel
V8PM10-M3/I 0.10 I 6500 13" diameter plastic tape and reel
V8PM10HM3/H
(1)
0.10 H 1500 7" diameter plastic tape and reel
V8PM10HM3/I
(1)
0.10 I 6500 13" diameter plastic tape and reel