HSMP-386J
High Power RF PIN Diode
Data Sheet
Description
Avago Technologies' HSMP-386J is a High Power RF PIN
Diode specically design for high power handling and low
distortion Transmit/Receive switching application. It is
housed in QFN 2x2mm size package which is having good
thermal resistance.
The unique with 8 dies in parallel conguration results to
low IL performance and low series resistance. The HSMP-
386J Power diode is built with match diode to ensure con-
sistency in performance.
Package Marking & Orientation
Features
• High Power Surface Mount Package QFN 2x2
• Match Diode for Consistent Performance
• Low Bias Current Requirement
• Low Series Resistance
• Low Insertion Loss & High Isolation
• Better Thermal Conductivity for Higher Power Dissipation
• Low Failure in Time (FIT) Rate
• Lead-free Option Available
• MSL1 & Lead Free
• Tape & Reel Option Available
Specications
• Low RS Switching typically 0.65Ω @ 100MHz., 50mA
• High Power Handling Up to 10W (40dBm) at 2GHz,
50mA
Application
• High Power Transmit / Receive Switch for Cellular
Infrastructure and Two Way Radio
Top view
Notes:
6P = Device Code
x = Month code indicates the month of manufacture
Pin#1
Anode
Cathode
Pin#1
Not Used
Bottom view
Cathode
Anode
Pin #1
Connected externally
on PCB board
Circuit Diagram of HSMP-386J
2
Table 1. Absolute Maximum Ratings
[1]
at T
C
= +25°C
Symbol Parameter Unit Max Rating
I
F
Forward Current (1µs Pulse) per die
[2]
Amp 1
P
IV
Peak Inverse Voltage V 100
T
j
Junction Temperature
°C
150
T
stg
Storage Temperature
°C
-60 to 150
θ
jc
Thermal Resistance
[3]
°C/W
45
DC P
diss
DC Power Dissipation
[4]
W 2.0
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. Eight dice are connected in parallel for this device.
3. TC = +25°C, where T
C
is dened to be the temperature at the package pins where contact is made to the circuit board.
4. Maximum DC P
diss
measured without RF input and maximum rating is base on device junction temperature.
Table 2. Electrical Performance at T
C
= +25°C
Minimum
Breakdown Voltage
V
BR
(V)
Typical
Forward Voltage
V
f
(V)
Maximum
Series Resistance
R
S
(Ohm)
Maximum
Total Capacitance
C
T
(pF)
100 0.85 0.77 1.25
Test Conditions
V
R
= V
BR
Measure I
R
≤ 5uA
I
F
= 50mA I
F
= 50 mA
f = 100 MHz
V
R
= 50V
f = 1MHz
Table 3. Typical Performance at T
C
= +25°C
Series Resistance
R
S
(W)
Carrier Lifetime
(nS)
Reverse Recovery Time
T
rr
(nS)
Total Capacitance
C
T
(pF)
0.65 260 130 0.75
Test Conditions
I
F
= 50mA
f = 100MHz
I
F
= 50mA
I
R
= 100mA
V
R
= 5V
I
F
= 50mA
90% Recovery
V
R
= 50V
f = 1MHz
Thermal Resistance
COperatingMaxT
P
diss
25).(
°
-
=