HSMP-383x
Surface Mount RF PIN Diodes
Data Sheet
Features
• Diodes Optimized for:
Low Capacitance Switching
Low Current Attenuator
• Surface Mount SOT-23 Package
Single and Dual Versions
Tape and Reel Options Available
• Low Failure in Time (FIT) Rate
[1]
• Lead-free
Note:
1.
For more information see the Surface Mount PIN Reliability Data Sheet.
Package Lead Code Identication (Top View)
Description/Applications
The HSMP-383x series of general purpose PIN diodes
are designed for two classes of applications. The rst
is attenuators where current consumption is the most
important design consideration. The second application
for this series of diodes is in switches where low
capacitance is the driving issue for the designer.
The HSMP-386x series Total Capacitance (C
T
) and Total
Resistance (R
T
) are typical specications. For applications
that require guaranteed performance, the general
purpose HSMP-383x series is recommended.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic,
carrier lifetime.
COMMON
CATHODE
#4
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
2
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol Parameter Units Absolute Maximum
I
f
Forward Current (1 ms Pulse) Amp 1
P
t
Total Device Dissipation mW
[2]
250
P
iv
Peak Inverse Voltage — Same as V
BR
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
this device.
2. CW Power Dissipation at T
LEAD
= 25°C. Derate to zero at maximum rated temperature.
PIN General Purpose Diodes, Electrical Specications T
C
= 25°C
Minimum Maximum Maximum
Part Package Breakdown Series Total
Number Marking Lead Voltage Resistance Capacitance
HSMP- Code Code Conguration V
BR
(V) R
S
(Ω) C
T
(pF)
3830 K0 0 Single 200 1.5 0.3
3832 K2 2 Series
3833 K3 3 Common Anode
3834 K4 4 Common Cathode
Test Conditions V
R
= V
BR
I
F
= 100 mA V
R
= 50 V
Measure f = 100 MHz f = 1 MHz
I
R
≤ 10 mA
Typical Parameters at T
C
= 25°C
Part Number Series Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance
HSMP- R
S
(Ω) τ (ns) T
rr
(ns) C
T
(pF)
383x 20 500 80 0.20 @ 50 V
Test Conditions I
F
= 1 mA I
F
= 50 mA V
R
= 10 V
f = 100 MHz I
R
= 250 mA I
F
= 20 mA
90% Recovery