HSMP-3816
Quad PIN Diode π Attenuator 300 kHz to 4 GHz
in SOT 25 Package
Data Sheet
Note:
Package marking provides
orientation and identication
“AT”= Device Code
“x” = Month code indicates
the month of manufacture
1
ATx
2
3
4
5
Pin 2 :
Series
Bias
Pin 3 :
RF In/Out
Pin 1 :
RF In/Out
Pin 4 :
Shunt
Bias
Pin 5 :
Shunt
Bias
Description
Avago Technologies’ HSMP-3816 is a wideband, low
insertion loss, high IIP3, Quad PIN Attenuator in a low cost
surface mount SOT-25 package. It provides a good match
and at attenuation over an extremely wide band from
300 kHz to 4 GHz.
The SOT-25 packages gives a reduction in part count and
takes up less space on board compared to multi package
solutions.
Four PIN Diodes in one package encourages performance
repeatability for improved production yield at board
level.
Package Marking and Pin connections
Features
• 4 PIN Diodes in a SOT-25 package
• 300 kHz to 4 GHz usable frequency band
• High Linearity
• Low insertion Loss
• MSL-1 and Lead-free
• Tape & Reel packaging option available
Specication At 1 GHz, V+=5V
• IIP3 = 45 dBm (Typical)
• Attenuation = 38 dB (Typical)
• Insertion Loss = -3 dB (Typical)
• Return Loss = - 22 dB (Typical)
Applications
• Broadband system application
(i.e., CATV, WCDMA, etc)
• General purpose Voltage-Control-Attenuator
for high linearity applications.
2
Absolute Max Ratings
[1]
, Tc = +25
o
C
Symbol Parameter Unit Abs Max
I
f
Forward Current (1 µs Pulse) Amp 1
P
IV
Peak Inverse Voltage V 100
T
j
Junction Temperature °C 150
T
stg
Storage Temperature °C -60 to 150
q
lb
Thermal Resistance
[2]
°C/W 167
P
In
Input Power
[3]
W 1.0
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. Thermal Resistance is measured from junction to board using IR method.
3. The Max Input Power is tested using demoboard as shown in Figure 1 at the worst-case (highest attenuation) bias condition of V+=5V, Vc=0V.
Typical Performance, Tc = +25
o
C (Each Diode)
Carrier Lifetime
t(ns)
Reverse Recovery Time
T
rr
(ns)
Total Capacitance
C
T
(pF)
1500 300 0.27
Test
Condition
I
F
= 50mA
I
R
= 250 mA
V
R
= 10 V
I
F
= 20 mA
90% Recovery
V
R
= 50V
f = 1MHz
Typical Performance for HSMP-3816 Quad PIN Diode π Attenuator @ +25
o
C
Parameter Test Condition Units Typical
Insertion Loss Vc = 15V, V+ = 5V, Freq = 1GHz dB -3.0
Return Loss Vc = 0V, V+ = 5V, Freq = 1GHz dB -22
Attenuation Vc = 0V, V+ = 5V, Freq = 1GHz dB 38
Input IP3 Vc = 1.5V, V+ = 5V, Freq = 1GHz dBm 45
Input IP3 Vc = 15V, V+ = 5V, Freq = 1GHz dBm 42
Input IP3 Vc = 1.5V, V+ = 5V, Freq = 100MHz dBm 37
Input IP3 Vc = 15V, V+ = 5V, Freq = 100MHz dBm 37
Input IP3 Vc = 1.5V, V+ = 5V, Freq = 30MHz dBm 35
Input IP3 Vc = 15V, V+ = 5V, Freq = 30MHz dBm 35
Notes :
1. Measurement above obtained using Wideband RF circuit design shown in Figure 1 & 2
Electrical Speci��cations, Tc = +25
o
C (Each Diode)
Minimum
Breakdown
Voltage
V
BR
(V)
Maximum
Total
Capacitance
C
T
(pF)
Minimum
Resistance
at I
F
= 0.01mA,
R
H
(Ω)
Maximum
Resistance
at I
F
= 20mA,
R
L
(Ω)
Maximum
Resistance
at I
F
= 100mA,
R
T
(Ω)
Resistance
at I
F
= 1mA,
R
M
(Ω)
100 0.35 1500 10 3.0 45 to 80
Test
Conditions
V
R
= V
BR
Measure
I
R
≤ 10uA
V
R
= 50V
f = 1MHz
I
F
= 0.01mA
f = 100MHz
I
F
= 20mA
f = 100MHz
I
F
= 100mA
f = 100MHz
I
F
= 1mA
f = 100MHz
Note : Rs parameters are tested under AQL 1.0