RClamp0504FB
Final Datasheet Rev 2.1
Revision date 2/20/2019
www.semtech.com
1 of 7
Semtech
Proprietary and Condential
Features
• High ESD withstand Voltage: +/-24kV (Contact) & +/-
30kV (Air) per IEC 61000-4-2
• High EOS Surge capability
• Low ESD clamping voltage
• Working voltage: 5V
• Low capacitance: 1.1 pF Typical (I/O to GND)
• Low dynamic resistance: 0.25Ω
• Solid-state silicon-avalanche technology
Mechanical Characteristics
• SC-70 6L package
• Pb-Free, Halogen Free, RoHS/WEEE compliant
• Nominal Dimensions: 2.1 x 2.0 x 1.0 mm
• Lead Finish: Matte Tin
• Marking: Marking code
• Packaging: Tape and Reel
Applications
• Monitors and Flat Panel Displays
• Analog Video Lines
• LVDS Lines
• USB 2.0
• SIM Ports
RClamp0504FB
Low Capacitance RClamp®
5V TVS for ESD & EOS Protection
Description
RClamp® TVS diodes are designed to protect sensitive
electronics from damage or latch-up due to transient
surge events. This device oers desirable characteristics
for board level protection including fast response time,
low operating and clamping voltage, and no device
degradation.
RClamp®0504FB features extremely good ESD and EOS
protection characteristics highlighted by low dynamic
resistance and high surge capability. Data (I/O) lines
are protected from EOS surge events as high as 14A
(tp = 8/20μs). Power buses may subjected to even
harsher EOS events. The TVS connection at pin 5 allows
protection of VBus lines to 28A (tp = 8/20μs).
RClamp0504FB is in a 6-pin, SC-70 6L package. The
leads are nished with lead-free matte tin. The
combination of small size, low capacitance, and high ESD
and EOS surge capability makes them ideal for use in
applications such as USB 2.0, multimedia
cards, and video interfaces.
1 3 4 6
2
5
Circuit Diagram Schematic & Pin Conguration
SC-70 6L (Top View)
PROTECTION PRODUCTS
RClamp0504FB
Final Datasheet Rev 2.1
Revision Date 2/20/2019
www.semtech.com
2 of 7
Semtech
Proprietary and Condential
Absolute Maximum Rating
Rating Symbol Value Units
Peak Pulse Power (I/O Pins, tp = 8/20µs) P
PK
230 W
Peak Pulse Power (VBus Pin, tp = 8/20µs) P
PK
500 W
Peak Pulse Current (I/O Pins, tp = 8/20µs) I
PP
14 A
Peak Pulse Current (VBus Pin, tp = 8/20µs) I
PP
28 A
ESD per IEC 61000-4-2 (Air)
(1)
ESD per IEC 61000-4-2 (Contact)
(1)
V
ESD
±30
±24
kV
Operating Temperature T
J
-55 to +125
O
C
Storage Temperature T
STG
-55 to +150
O
C
Electrical Characteristics (T=25
O
C unless otherwise specied)
Parameter Symbol Conditions Min. Typ. Max. Units
Reverse Stand-O Voltage V
RWM
Any pin to Pin 2 5 V
Reverse Breakdown Voltage V
BR
I
BR
= 1mA, any I/O Pin to Pin 2 6 8.5 10 V
Reverse Leakage Current I
R
V
RWM
= 5V, any I/O Pin to Pin 2 0.1 μA
Clamping Voltage V
C
t
p
= 8/20μs
(Any I/O Pin to
Pin 2 )
I
PP
= 14A 13.7 16.5
V
t
p
= 8/20μs
(Pin 5 to Pin 2 )
I
PP
= 28A 15.5 17.5
ESD Clamping Voltage
2
V
C
t
p
= 0.2/100ns
(Any I/O Pin to
Pin 2)
I
PP
= 4A 10.5
V
I
PP
= 16A 13.5
Dynamic Resistance
2,3
R
DYN
t
p
= 0.2/100ns, Any I/O Pin to Pin 2 0.25 Ω
Junction Capacitance C
J
V
R
= 0V, f = 1MHz
Any I/O Pin to Pin 2 1.1 2.5
pF
Between I/O pins 0.55 1.5
Notes
1) Measured with a 40dB attenuator, 50 Ohm scope input impedance, 2GHz bandwidth. ESD gun return path connected to ESD ground plane.
2) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I
TLP
and V
TLP
averaging window: t1 = 70ns to t2 = 90ns.
3) Dynamic resistance calculated from I
TLP
= 4A to I
TLP
= 16A