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RClamp5031T
Low Capacitance RClamp
®
5V, 1-Line ESD Protection
PROTECTION PRODUCTS - RailClamp
®
3/27/2015
RClamp
®
TVS diodes are ultra low capacitance devices
designed to protect sensitive electronics from damage or
latch-up due to ESD, EFT, and EOS. They are designed
for use on high speed ports in applications such as cell
phones, notebook computers, and other portable elec-
tronics. These devices offer desirable characteristics for
board level protection including fast response time, low
operating and clamping voltage, and no device degrada-
tion.
RClamp5031T feature extremely good ESD protection
characteristics highlighted by low typical dynamic resis-
tance of 0.25 Ohms, low peak ESD clamping voltage,
and high ESD withstand voltage (+/-15kV contact per
IEC 61000-4-2). Low maximum capacitance (0.45pF at
VR=0V) minimizes loading on sensitive cirucuits. Each
device will protect one high-speed data line operating at
5 Volts.
RClamp5031T is in a 2-pin SLP0806P2T package mea-
suring 0.8 x 0.6 x 0.4mm. Leads are nished with lead-
free NiPdAu. The combination of working voltage, low
dynamic resistance, and low capacitance makes these
devices ideal for use in applications such as HDMI, MHL,
and USB 3.0.
.
Transient protection to
IEC 61000-4-2 (ESD) 18kV (air), 15kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 3A (8/20µs)
Protects one high-speed data line
Low capacitance: 0.45pF maximum
Operating Voltage: 5V
Low dynamic resistance: 0.25 Ohms (Typ)
Low ESD clamping voltage
Low leakage current
Solid-state silicon-avalanche technology
Description
Nominal Dimensions
Features
Applications
Functional Schematic
SLP0806P2T package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Lead Finish: NiPdAu
Molding compound ammability rating: UL 94V-0
Marking : Marking code
Packaging : Tape and Reel
HDMI 1.4
MHL
USB 3.0
MiPi / MDDI
FM Antenna
Mechanical Characteristics
0.60
0.80
0.40
0.34 BSC
2
1
Nominal Dimensions in mm Schematic (Bottom View)
22015 Semtech Corporation www.semtech.com
RClamp5031T
PROTECTION PRODUCTS
Absolute Maximum Ratings
Electrical Characteristics (T=25
O
C unless otherwise specied)
Parameter Symbol Conditions Min. Typ. Max. Units
Reverse Stand-Off Voltage V
RWM
T = -40 to +85
O
C 5 V
Breakdown Voltage V
BR
I
BR
= 10mA 6.5 9.5 10.5 V
Holding Current I
H
50 mA
Reverse Leakage Current I
R
V
RWM
= 5V <5 100 nA
Clamping Voltage V
C
I
PP
= 3A, t
P
= 8/20µs 10 V
ESD Clamping Voltage
2
V
C
I
PP
= 4A
tp = 0.2/100ns
5.5 V
ESD Clamping Voltage
2
V
C
I
PP
= 16A
tp = 0.2/100ns
8.5 V
Dynamic Resistance
2, 3
R
DYN
tp = 0.2/100ns 0.25 Ohms
Junction Capacitance C
J
VR = 0V; f = 1MHz 0.35 0.45 pF
Rating Symbol Value Units
Peak Pulse Current (tp = 8/20µs) I
PP
3 A
ESD per IEC 61000-4-2 (Air)
1
V
ESD
18
kV
ESD per IEC 61000-4-2 (Contact)
1
15
Operating Temperature T
J
-40 to +85 °C
Storage Temperature T
STG
-55 to +150 °C
Notes
1)Measured with a 20dB attenuator, 50 Ohm scope input impedance, 2GHz bandwidth. ESD gun return path connected to ESD ground plane.
2)Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I
TLP
and V
TLP
averaging window: t
1
= 70ns to t
2
= 90ns.
3)Dynamic resistance calculated from I
TLP
= 4A to I
TLP
= 16A