RClamp2431TQ
Final Datasheet Rev 3.0
Revision date 6/1/2018
www.semtech.com
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Semtech
Features
• Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±15kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Cable Discharge Event (CDE)
• Ultra-small package (1.0 x 0.6 x 0.4mm)
• Protects one I/O line
• Low capacitance: 0.35pF (Typical)
• Low clamping voltage
• Working Voltage: 24V
• Solid-state silicon-avalanche technology
• Qualied for AEC-Q100 Grade 1
Mechanical Characteristics
• SLP1006P2T package
• Molding compound ammability rating: UL 94V-0
• Marking: Marking code + date code
• Packaging : Tape and Reel
• Lead Finish: NiPdAu
• Pb-Free, Halogen Free, RoHS/WEEE Compliant
Applications
• Automobile Antenna
• CAN Bus Ports
• Wi-Fi Interfaces
• RFID
RClamp2431TQ
Ultra-Low Capacitance RClamp®
1-Line, 24V ESD Protection
Description
RailClamp® TVS diodes are specically designed to
protect sensitive components which are connected to
high-speed data and transmission lines from overvoltage
caused by ESD (electrostatic discharge), CDE (cable
discharge events), and EFT (electrical fast transients).
The RClamp2431TQ has a typical capacitance of only
0.35pF. This allows it to be used on Wi-Fi, RFID, and
other circuits operating in excess of 3GHz without signal
attenuation. It may be used to meet the ESD immunity
requirements of IEC 61000-4-2.
The RClamp2431TQ is in a 2-pin SLP1006P2T package
measuring 1.0 x 0.6 x 0.4mm. The leads are spaced at
a pitch of 0.65mm and feature a lead-free nish. Each
device will protect one high-speed line operating up to
24 volts. It gives the designer the exibility to protect
single lines in applications where arrays are not practical.
The RClamp2431TQ is qualied to AEC-Q100 Grade1 for
use in automotive environments.
SLP1006P2T-1-R0
1.00
0.60
0.40
1
2
Package Dimension Schematic & Pin Conguration
SLP1006P2T (Bottom View)
PROTECTION PRODUCTS
Nominal Dimensions (mm)
RClamp2431TQ
Final Datasheet Rev 3.0
Revision Date 6/1/2018
www.semtech.com
2 of 7
Semtech
Absolute Maximum Rating
Rating Symbol Value Units
Peak Pulse Power (tp = 8/20µs) P
PK
100 W
Peak Pulse Current (tp = 8/20µs) I
PP
2 A
ESD per IEC 61000-4-2 (Air)
(1)(2)
ESD per IEC 61000-4-2 (Contact)
(1)(2)
V
ESD
±15
±15
kV
Operating Temperature T
J
-40 to +125
O
C
Storage Temperature T
STG
-55 to +150
O
C
Electrical Characteristics (T=25
O
C unless otherwise specied)
Parameter Symbol Conditions Min. Typ. Max. Units
Reverse Stand-O Voltage V
RWM
24 V
Reverse Breakdown Voltage V
BR
I
BR
= 1 mA 26.7 36 V
Reverse Leakage Current I
R
V
RWM
= 24V
T=25°C 5 50
nA
T=125°C 500
Clamping Voltage V
C
tp = 8/20µs
I
PP
= 1A 45
V
I
PP
= 2A 50
Junction Capacitance C
J
V
R
= 0V, f = 1MHz
T=25°C 0.35 0.5
pF
T=125°C 1.0
Notes:
1) ESD gun return path connected to ESD ground plane.
2) In-system ESD withstand voltage