AiT Semiconductor Inc.
www.ait-ic.com
BAV19WS~ BAV21WS
SWITCHING DIODE
SILICON EPITAXIAL PLANAR HIGH VOLTAGE DIODE
REV1.0 - DEC 2017 RELEASED - - 1 -
DESCRIPTION
FEATURES
The
BAV19WS~ BAV21WS is available in SOD-323
Package
Fast switching speed
Surface mount package ideally suited for
automatic insertion
Available in SOD-323 Package
ORDERING INFORMATION
Package Type
Part Number
SOD-323
BAV19WS
BAV20WS
BAV21WS
Note SPQ: 3,000pcs/Reel
AiT provides all RoHS Compliant Products
AiT Semiconductor Inc.
www.ait-ic.com
BAV19WS~ BAV21WS
SWITCHING DIODE
SILICON EPITAXIAL PLANAR HIGH VOLTAGE DIODE
REV1.0 - DEC 2017 RELEASED - - 2 -
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C
Parameter
Symbol
BAV19WS
BAV20WS
BAV21WS
Unit
Repetitive Peak Reverse Voltage V
RRM
120 200 250 V
Reverse Voltage V
R
100 150 200 V
Average Rectified Forward Current
I
F(AV)
200 mA
Forward Continuous Current I
FM
400 mA
Repetitive Peak Forward Current
I
FRM
625 mA
Non-Repetitive Peak Forward
Surge Current
t=1us
t=1s
I
FSM
2.5
0.5
A
Power Dissipation
P
tot
200 mW
Operating and Storage Temperature Rage
T
J
,T
STG
-65 ~ +150 °C
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
T
A
= 25°C
Parameter
Symbol
Conditions
Min.
Max.
Unit
Reverse Breakdown Voltage V
(BR)R
I
R
=100uA
BAV19WS
BAV20WS
BAV21WS
120
200
250
- V
Reverse Current I
R
V
R
=100V
V
R
=150V
V
R
=200V
BAV19WS
BAV20WS
BAV21WS
- 100 nA
Forward Voltage V
F
I
F
=100mA
I
F
=200mA
-
1
1.25
V
Total Capacitance C
T
V
R
=0V，f=1MHz - 5 pF
Reverse Recovery Time t
rr
I
F
=I
R
=30mA，
I
RR
=0.1x I
R
，R
L
=100Ω
- 50 ns