eGaN® FET DATASHEET
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | | 1
EPC2012C
EPC2012C – Enhancement Mode Power Transistor
V
DS
, 200 V
R
DS (on)
, 100 mΩ
I
D
, 5 A
EPC2012C eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High Frequency DC-DC Conversion
• Class D Audio
• Wireless Power Transfer
Benets
• Ultra High Eciency
• Ultra Low R
DS(on)
• Ultra Low Q
G
• Ultra Small Footprint
EFFICIENT POWER CONVERSION
HAL
G
D
S
Maximum Ratings
PARAMETER VALUE UNIT
V
DS
Drain-to-Source Voltage (Continuous) 200 V
I
D
Continuous (T
A
= 25˚C, R
θJA
= 26°C/W) 5
A
Pulsed (25°C, T
PULSE
= 300 µs) 22
V
GS
Gate-to-Source Voltage 6
V
Gate-to-Source Voltage -4
T
J
Operating Temperature -40 to 150
°C
T
STG
Storage Temperature -40 to 150
Thermal Characteristics
PARAMETER TYP UNIT
R
θJC
Thermal Resistance, Junction to Case
4.2
°C/W R
θJB
Thermal Resistance, Junction to Board
12.5
R
θJA
Thermal Resistance, Junction to Ambient (Note 1)
85
Note 1: R
θJA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
All measurements were done with substrate connected to source.
Static Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BV
DSS
Drain-to-Source Voltage V
GS
= 0 V, I
D
= 60 μA 200 V
I
DSS
Drain-Source Leakage V
GS
= 0 V, V
DS
= 160 V 10 50 µA
I
GSS
Gate-to-Source Forward Leakage V
GS
= 5 V 0.2 1 mA
Gate-to-Source Reverse Leakage V
GS
= -4 V 10 50 µA
V
GS(TH)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 1 mA 0.8 1.4 2.5 V
R
DS(on)
Drain-Source On Resistance V
GS
= 5 V, I
D
= 3 A 70 100 mΩ
V
SD
Source-Drain Forward Voltage I
S
= 0.5 A, V
GS
= 0 V 1.9 V
www.epc-co.com/epc/Products/eGaNFETs/ EPC2012C.aspx
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment
leveraging the infrastructure that has been developed over the last 60 years. GaN’s exceptionally
high electron mobility and low temperature coecient allows very low R
DS(on)
, while its lateral
device structure and majority carrier diode provide exceptionally low Q
G
and zero Q
RR
. The end
result is a device that can handle tasks where very high switching frequency, and low on-time are
benecial as well as those where on-state losses dominate.
eGaN® FET DATASHEET
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 | | 2
EPC2012C
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
15
20
10
5
0
0 1 2 3 4 5 6
V
GS
= 5 V
V
GS
= 4 V
V
GS
= 3 V
V
GS
= 2 V
Figure 1: Typical Output Characteristics at 25°C
R
DS(om)
– Drain-to-Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
250
200
100
50
150
0
2 2.5 3 3.5 4 4.5 5
I
D
= 3 A
I
D
= 6 A
I
D
= 10 A
I
D
= 15 A
Figure 3: R
DS(on)
vs. V
GS
for Various Drain Currents
I
D
– Drain Current (A)
V
GS
– Gate-to-Source Voltage (V)
20
15
10
5
0
0.5 1 1.5 2 2.5 3 4 4.5 53.5
25˚C
125˚C
V
DS
= 6 V
Figure 2: Transfer Characteristics
R
DS(on)
– Drain-to-Source Resistance (m
Ω)
V
GS
– Gate-to-Source Voltage (V)
50
150
100
200
250
0
2 2.5 3 3.5 4 4.5 5
I
D
= 3 A
25˚C
125˚C
Figure 4: R
DS(on)
vs. V
GS
for Various Temperatures
Dynamic Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
C
ISS
Input Capacitance
V
DS
= 100 V, V
GS
= 0 V
100 140
pFC
RSS
Reverse Transfer Capacitance
0.4 0.6
C
OSS
Output Capacitance
64 85
R
G
Gate Resistance
0.6 Ω
Q
G
Total Gate Charge
V
DS
= 100 V, V
GS
= 5 V, I
D
= 3 A 1 1.3
nC
Q
GS
Gate-to-Source Charge
V
DS
= 100 V, I
D
= 3 A
0.3
Q
GD
Gate-to-Drain Charge
0.2 0.35
Q
G(TH)
Gate Charge at Threshold
0.2
Q
OSS
Output Charge
V
DS
= 100 V, V
GS
= 0 V 10 13
Q
RR
Source-Drain Recovery Charge
0
All measurements were done with substrate connected to source.
Note 2: C
OSS(ER)
is a xed capacitance that gives the same stored energy as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.
Note 3: C
OSS(TR)
is a xed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.