EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2018 | | 1
QUALIFICATION REPORT
EPC Reliability & Quality
EPC eGaN® FET
Qualication Report
EPC2051
EFFICIENT POWER CONVERSION
Robert Strittmatter, Director of Engineering, Efficient Power Conversion Corporation
This report summarizes the Product Qualication results for EPC
part number EPC2051 which meets all required qualication
requirements and is released for production.
Qualication Test Overview
EPC’s eGaN FETs were subjected to a wide variety of stress tests under
conditions that are typical for silicon-based power MOSFETs. These tests
included:
– High temperature reverse bias (HTRB): Parts are subjected to a drain
source voltage at the maximum rated temperature
– High temperature gate bias (HTGB): Parts are subjected to a gate
source voltage at the maximum rated temperature
– Temperature cycling (TC): Parts are subjected to alternating high
and low temperature extremes
– High temperature high humidity reverse bias (H3TRB): Parts are
subjected to humidity under high temperature with a drain-source
voltage applied
– Moisture sensitivity level (MSL): Parts are subjected to moisture,
temperature, and three cycles of reow.
The stability of the devices is veried with DC electrical tests after stress
biasing. The electrical parameters are measured at time-zero and at
interim readout points at room temperature. Electrical parameters such
as the gate-source leakage, drain-source leakage, gate-source threshold
voltage, and on-state resistance are compared against the data sheet
specications. A failure is recorded when a part exceeds the datasheet
specications. eGaN FETs are stressed to meet the latest Joint Electron
Device Engineering Council (JEDEC) standards when possible.
Parts were mounted onto FR5 (high Tg FR4) or polyimide adaptor cards.
Adaptor cards of 1.6 mm in thickness with two copper layers were used.
The top copper layer was 1 oz. or 2 oz., and the bottom copper layer
was 1 oz. Kester NXG1 type 3 SAC305 solder no clean ux was used in
mounting the part onto an adaptor card.
Scope
The testing matrix in this qualication report covers the qualication
of EPC2045, EPC2051, and EPC2052 listed in the table below.
EPC2045, EPC2051, and EPC2052 have the same voltage ratings and
device processing.
Part Number
Voltage
(V)
R
DS(on)
(mΩ)
Die Size
(mm x mm)
EPC2045 100 7 L (2.5 x 1.5)
EPC2052 100 12.5 M (1.5 x 1.5)
EPC2051 100 25 S (1.3 x 0.85)
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(sample x lot)
Duration (Hrs)
HTRB EPC2045 100 L (2.5 x 1.5) T = 150
o
C, V
DS
= 80 V 0 77 x 1 1000
HTRB EPC2051 100 S (1.3 x 0.85) T = 150
o
C, V
DS
= 80 V 0 77 x 2 1000
High Temperature Reverse Bias
Parts were subjected to 80% of the rated drain-source voltage at the maximum rated temperature for a stress period of 1000 hours.
Table 1. High Temperature Reverse Bias Test