GA01PNS150-220
Apr 2015 Latest version at: http://www.genesicsemi.com/sic_pin Page 1 of 4
Silicon Carbide PiN Diode
Features
Package
RoHS Compliant
15 kV
blocking
175 °C operating temperature
Fast turn off characteristics
Soft reverse recovery characteristics
Ultra-Fast high temperature switching
Advantages
Applications
Highest voltage rectifier commercially available
Reduced stacking
Reduced system complexity/Increased reliability
Voltage Multiplier
Ignition/Trigger Circuits
Oil/Downhole
Lighting
Defense
Maximum Ratings at T
j
= 175 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
Repetitive peak reverse voltage V
RRM
15 kV
Continuous forward current I
F
1 A
RMS forward current I
F(RMS)
0.5 A
Operating and storage temperature T
j
, T
stg
-55 to 175 °C
Electrical Characteristics at T
j
= 175 °C, unless otherwise specified
Parameter Symbol Conditions
Values
Unit
min. typ. max.
Diode forward voltage V
F
I
F
= 1 A, T
j
= 25 °C
6.4
V
I
F
= 1 A, T
j
= 175 °C
4.7
Reverse current I
R
V
R
= 8 kV, T
j
= 25 °C
1 20
µA
V
R
= 8 kV, T
j
= 175 °C
100
Total reverse recovery charge Q
rr
I
F
≤ I
F,MAX
dI
F
/dt = 70 A/μs
T
j
= 175 °C
V
R
= 1000 V
I
F
= 1.5 A
558 nC
Switching time t
s
V
R
= 1000 V
I
F
= 1.5 A
< 236 ns
Total capacitance C
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
22
pF
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
4
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
3
Total capacitive charge Q
C
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
4.5 nC
2
1
V
RRM
= 15.0 kV
I
F (Tc=25°C)
= 1 A
PIN 1
PIN 2
GA01PNS150-220
Apr 2015 Latest version at: http://www.genesicsemi.com/sic_pin Page 2 of 4
Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics at 25°C
Figure 3
: Typical Junction Capacitance vs Reverse
Voltage
Characteristics
Figure 4
: Typical
Turn Off
Characteristics
at
I
k
= 0.5 A
and
V
R
= 1000 V
Figure 5:
Typical
Turn Off
Characteristics
at
T
j
= 17
5
°C
and
V
R
= 1000 V
Figure 6: Reverse Recovery Charge vs Cathode Current