CS10N60F A9HD
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2016V01
○
R
S
ilicon
N
-
Channel Power MOSFET
General Description：
CS10N60F A9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:39nC)
l Low Reverse transfer capacitances(Typical:16pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25 unless otherwise specified℃ ）：
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
600
V
I
D
Continuous Drain Current
10
A
Continuous Drain Current T
C
= 100 °C
8
A
I
DM
a1
Pulsed Drain Current
40
A
V
GS
Gate-to-Source Voltage
±30 V
E
AS
a2
Single Pulse Avalanche Energy
800
mJ
E
AR
a1
Avalanche Energy ,Repetitive
80
mJ
I
AR
a1
Avalanche Current
4.0
A
dv/dt
a3
Peak Diode Recovery dv/dt
5.0
V/ns
P
D
Power Dissipation
50
W
Derating Factor above 25°C
0.4
W/℃
V
ESD(G-S)
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
4000
V
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
V
DSS
600 V
I
D
10 A
P
D
(T
C
=25℃)
50 W
R
DS(ON)Typ
0.6 Ω
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2015V01
○
R
CS10N60F A9HD
Electrical Characteristics（Tc= 25 unless otherwise specified℃ ）：
OFF Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
V
DSS
Drain to Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
600
-- --
V
ΔBV
DSS
/ΔT
J
Bvdss Temperature Coefficient
ID=250uA,Reference25℃
-- 0.74
--
V/℃
I
DSS
Drain to Source Leakage Current
V
DS
= 600V, V
GS
= 0V,
T
a
= 25℃
-- -- 1
µA
V
DS
=480V, V
GS
= 0V,
T
a
= 125℃
-- --
100
I
GSS(F)
Gate to Source Forward Leakage
V
GS
=+20V
-- -- 10
µA
I
GSS(R)
Gate to Source Reverse Leakage
V
GS
=-20V
-- -- -10
µA
ON Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
R
DS(ON)
Drain-to-Source On-Resistance
V
GS
=10V,I
D
=5A
-- 0.6
0.75
Ω
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
2.0 4.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
g
fs
Forward Transconductance
V
DS
=15V, I
D
=5.0A
-- 9 -- S
C
iss
Input Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
-- 1556
--
pF C
oss
Output Capacitance
-- 158
--
C
rss
Reverse Transfer Capacitance
-- 16 --
Resistive Switching Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
t
d(ON)
Turn-on Delay Time
I
D
=10.0A V
DD
= 300V
V
GS
= 10V R
G
= 4.7Ω
-- 12 --
ns
tr
Rise Time
-- 16 --
t
d(OFF)
Turn-Off Delay Time
-- 39 --
t
f
Fall Time
-- 17 --
Q
g
Total Gate Charge
I
D
=10.0A V
DD
=300V
V
GS
= 10V
-- 39
nC Q
gs
Gate to Source Charge
-- 7.4 --
Q
gd
Gate to Drain (“Miller”)Charge
-- 16 --