CS450 ANH
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2015V01
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General Description:
CS450 ANH, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-3P(N), which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance
(Rdso
n≤0.45Ω )
l Low Gate Charge (Typical Data:45nC)
l Low Reverse transfer capacitances(Typical:23pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
500
V
I
D
Continuous Drain Current
13
A
Continuous Drain Current T
C
= 100 °C
10
A
I
DM
Pulsed Drain Current
52
A
V
GS
Gate-to-Source Voltage
±30
V
E
AS
Single Pulse Avalanche Energy
1100
mJ
E
AR
Avalanche Energy ,Repetitive
78
mJ
I
AR
Avalanche Current
4.0
A
dv/dt
Peak Diode Recovery dv/dt
5
V/ns
P
D
Power Dissipation
150
W
Derating Factor above 25°C
1.2
W/℃
T
J
,T
stg
Operating Junction and Storage Temperature Range
150,–55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
V
DSS
500 V
I
D
13 A
P
D
(T
C
=25℃)
150 W
R
DS(ON)Typ
0.34 Ω