CS10N60F A9R-G
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Pag e 1 of 10 2017V01
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Silicon N-Channel Power MOSFET
General Description：
CS10N60F A9R-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance
(Rdso
n≤0.9
Ω)
Low Gate Charge (Typical Data:32nC)
Low Reverse transfer capacitances(Typical:7.5pF)
100% Single Pulse avalanche energy Test
Halogen Free
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
Rating
Units
V
DSS
Drain-to-Source Voltage
600
V
I
D
Continuous Drain Current
10
A
Continuous Drain Current T
C
= 100 °C
6.3
A
I
DM
a1
Pulsed Drain Current
40
A
V
GS
Gate-to-Source Voltage
±30
V
E
AS
a2
Single Pulse Avalanche Energy
580
mJ
dv/dt
a3
Peak Diode Recovery dv/dt
5.0
V/ns
P
D
Power Dissipation
40
W
Derating Factor above 25°C
0.32
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
V
DSS
600
V
I
D
10
A
P
D
(T
C
=25℃)
40
W
R
DS(ON)Typ
0.68
Ω
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Pag e 2 of 10 2017V01
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CS10N60F A9R-G
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Symbol
Parameter
Test Conditions
Rating
Unit
s
Min.
Typ.
Max.
V
DSS
Drain to Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
600
--
--
V
ΔBV
DSS
/ΔT
J
Bvdss Temperature Coefficient
ID=250uA,Reference25℃
--
0.67
--
V/℃
I
DSS
Drain to Source Leakage Current
V
DS
=600V, V
GS
= 0V,
T
a
= 25℃
--
--
1
µA
V
DS
=480V, V
GS
= 0V,
T
a
= 125℃
--
--
100
µA
I
GSS(F)
Gate to Source Forward Leakage
V
GS
=+30V
--
--
100
nA
I
GSS(R)
Gate to Source Reverse Leakage
V
GS
=-30V
--
--
-100
nA
ON Characteristics
Symbol
Parameter
Test Conditions
Rating
Units
Min.
Typ.
Max.
R
DS(ON)
Drain-to-Source On-Resistance
V
GS
=10V,I
D
=5A
--
0.68
0.9
Ω
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
2.0
--
4.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Rating
Units
Min.
Typ.
Max.
g
fs
Forward Transconductance
V
DS
=15V, I
D
=5A
--
9.5
--
S
C
iss
Input Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
--
1609
--
pF
C
oss
Output Capacitance
--
136
--
C
rss
Reverse Transfer Capacitance
--
7.5
--
Resistive Switching Characteristics
Symbol
Parameter
Test Conditions
Rating
Units
Min.
Typ.
Max.
t
d(ON)
Turn-on Delay Time
I
D
=10A V
DD
= 300V
R
G
=10Ω
--
26
--
ns
tr
Rise Time
--
23
--
t
d(OFF)
Turn-Off Delay Time
--
49
--
t
f
Fall Time
--
27
--
Q
g
Total Gate Charge
I
D
=10A V
DD
=48 0V
V
GS
= 10V
--
32
--
nC
Q
gs
Gate to Source Charge
--
8
--
Q
gd
Gate to Drain (“Miller”)Charge
--
12
--