CS4N60 A0HD
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2015V01
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R
Silicon N-Channel Power MOSFET
General Description:
CS4N60 A0HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-263, which accords with the RoHS standard.
Features:
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:14.5nC)
l Low Reverse transfer capacitances(Typical:8.5pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25 unless otherwise specified℃ ):
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
600
V
I
D
Continuous Drain Current
4
A
Continuous Drain Current T
C
= 100 °C
3.2
A
I
DM
Pulsed Drain Current
16
A
V
GS
Gate-to-Source Voltage
±30 V
E
AS
Single Pulse Avalanche Energy
200
mJ
E
AR
Avalanche Energy ,Repetitive
30
mJ
I
AR
Avalanche Current
2.5
A
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
P
D
Power Dissipation
75
W
Derating Factor above 25°C
0.60
W/℃
V
ESD(G-S)
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
3000
V
T
J
,T
stg
Operating Junction and Storage Temperature Range
150,–55 to 150 ℃
T
L
Maximum Temperature for Soldering
300
℃
V
DSS
600 V
I
D
4 A
P
D
(T
C
=25℃)
75 W
R
DS(ON)Typ
1.8 Ω