CS6N90F A9H
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2015V01
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Silicon N-Channel Power MOSFET
General Description：
CS6N90F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤2.3Ω )
l Low Gate Charge (Typical Data:34nC)
l Low Reverse transfer capacitances(Typical:11pF)
l 100% Single Pulse avalanche energy Test
Applications：
ATX Power、LED Power.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
900
V
I
D
Continuous Drain Current
6
A
Continuous Drain Current T
C
= 100 °C
4
A
I
DM
a
1
Pulsed Drain Current
24
A
V
GS
Gate-to-Source Voltage
±30
V
E
AS
a
2
Single Pulse Avalanche Energy
120
mJ
E
AR
a
1
Avalanche Energy ,Repetitive
20
mJ
I
AR
a
1
Avalanche Current
2
A
dv/dt
a
3
Peak Diode Recovery dv/dt
5.0
V/ns
P
D
Power Dissipation
48
W
Derating Factor above 25°C
0.384
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150 ℃
T
L
Maximum Temperature for Soldering
300
℃
V
DSS
900 V
I
D
6 A
P
D
(T
C
=25℃)
48 W
R
DS(ON)Typ
1.85 Ω
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2015V01
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CS6N90F A9H
Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）：
OFF Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
V
DSS
Drain to Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
900
-- --
V
ΔBV
DSS
/ΔT
J
Bvdss Temperature Coefficient
ID=250uA,Reference25 ℃
-- 0.6 --
V/℃
I
DSS
Drain to Source Leakage Current
V
DS
=
9
00
V, V
GS
= 0V
,
T
a
= 25℃
-- -- 25
µA
V
DS
=720V, V
GS
= 0V,
T
a
= 125℃
-- --
250
I
GSS(F)
Gate to Source Forward Leakage
V
GS
=+30V
-- -- 100
nA
I
GSS(R)
Gate to Source Reverse Leakage
V
GS
=-30V
-- -- -100
nA
ON Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
R
DS(ON)
Drain-to-Source On-Resistance
V
GS
=10V,I
D
=3A
-- 1.85
2.3
Ω
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
2.0 4.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
g
fs
Forward Trans conductance
V
DS
=15V, I
D
=3A
-- 7.5 -- S
C
iss
Input Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
-- 1355
--
pF C
oss
Output Capacitance
-- 111
--
C
rss
Reverse Transfer Capacitance
-- 11 --
Resistive Switching Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
t
d(ON)
Turn-on Delay Time
I
D
=6A V
DD
= 450V
V
GS
= 10V R
G
=25Ω
-- 20 --
ns
tr
Rise Time
-- 42 --
t
d(OFF)
Turn-Off Delay Time
-- 88 --
t
f
Fall Time
-- 49 --
Q
g
Total Gate Charge
I
D
=6A V
DD
=450V
V
GS
= 10V
-- 34
nC Q
gs
Gate to Source Charge
-- 6 --
Q
gd
Gate to Drain (“Miller”)Charge
-- 14 --