CS20N50 ANH
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2015V01
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Silicon N-Channel Power MOSFET
General Description：
CS20N50 ANH, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3P
（N）, which accords with the RoHS standard..
Features：
l Fast Switching
l Low ON Resistance
(Rdso
n≤0.3Ω)
l Low Gate Charge (Typical Data:63nC)
l Low Reverse transfer capacitances(Typical:25pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
500
V
I
D
Continuous Drain Current
20
A
Continuous Drain Current T
C
= 100 °C
12.5
A
I
DM
a
1
Pulsed Drain Current
80
A
V
GS
Gate-to-Source Voltage
±30
V
E
AS
a
2
Single Pulse Avalanche Energy
1500
mJ
E
AR
a
1
Avalanche Energy ,Repetitive
90
mJ
I
AR
a
1
Avalanche Current
4.3
A
dv/dt
a
3
Peak Diode Recovery dv/dt
5.0
V/ns
P
D
Power Dissipation
230
W
Derating Factor above 25°C
1.84
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
V
DSS
500 V
I
D
20 A
P
D
(T
C
=25℃)
230 W
R
DS(ON)Typ
0.25 Ω
A
CS20N50 ANH
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WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2015V01
Electrical Characteristics（Tc= 25 ℃ unless otherwise specified）：
OFF Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
V
DSS
Drain to Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
500
-- --
V
ΔBV
DSS
/ΔT
J
Bvdss Temperature Coefficient
ID=250uA,Reference25 ℃
-- 0.55
--
V/℃
I
DSS
Drain to Source Leakage Current
V
DS
=
5
00V, V
GS
= 0V
,
T
a
= 25℃
-- -- 1
µA
V
DS
=400V, V
GS
= 0V,
T
a
= 125℃
100
I
GSS(F)
Gate to Source Forward Leakage
V
DS
=0V, V
GS
= 30V
-- -- 100
nA
I
GSS(R)
Gate to Source Reverse Leakage
V
DS
=0V, V
GS
= -30V
-- -- -100
nA
ON Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
R
DS(ON)
Drain-to-Source On-Resistance
V
GS
=10V,I
D
=10A
-- 0.25
0.3
Ω
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
2.0 -- 4.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
g
fs
Forward Trans conductance
V
DS
=15V, I
D
=10A
17 -- S
C
iss
Input Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
-- 2863
pF C
oss
Output Capacitance
-- 285
C
rss
Reverse Transfer Capacitance
-- 25
Resistive Switching Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min.
Typ.
Max.
t
d(ON)
Turn-on Delay Time
I
D
=20A V
DD
= 250V
R
G
= 25Ω
-- 33
ns
tr
Rise Time
-- 75
t
d(OFF)
Turn-Off Delay Time
-- 181
t
f
Fall Time
-- 83
Q
g
Total Gate Charge
I
D
=20A V
DD
=250V
V
GS
= 10V
-- 63
nC Q
gs
Gate to Source Charge
-- 14
Q
gd
Gate to Drain (“Miller”)Charge
-- 24