SCT2080KEHR
Automotiv e G rade N-channel SiC power MOSFET
-
-
Unit
175
A
1200
A
Value
SCT2080KE
30
°C
°C
55 to 175
V
6 to +22
3) Fast reverse recovery
Range of storage temperature
T
stg
Junction temperature
T
j
Type
Packing
Marking
Packing code
Basic ordering unit (pcs)
Tape width (mm)
Reel size (mm)
A
Tube
Outline
Inner circuit
Packaging specifications
TO-247N
V
DSS
R
DS(on)
(Typ.)
I
D
5) Simple to drive
2) Fast switching speed
4) Easy to parallel
1200V
80mΩ
40A
Features
1) Low on-resistance
Package
V
V
GSS_surge
*3
C11
6) Pb-free lead plating ; RoHS compliant
Gate - Source voltage (DC)
Parameter
T
c
= 25°C
Drain - Source voltage
T
c
= 100°C
Continuous drain current
Pulsed drain current
7) Qualified to AEC-Q101
Absolute maximum ratings (T
a
= 25°C)
Application
Gate - Source surge voltage (ｔ
surge
˂ 300nsec)
10 to +26
V
V
GSS
・Automobile
・Switch mode power supplies
Symbol
40
80
I
D,pulse
*2
I
D
*1
28
V
DSS
I
D
*1
TO-247N
(1)
(3)
(2)
*1
(1) Gate
(2) Drain
(3) Source
* Body Diode
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TSQ50211-SCT2080KEHR
16.Nov.2018 - Rev.001
Datasheet
SCT2080KEHR
R
th3
1.62E-01
C
th3
2.49E-01
R
th2
1.97E-01
R
th1
SymbolSymbol Value Unit
7.80E-02
Unit
Ws/K
Value
5.00E-03
K/W
C
th1
C
th2
1.80E-02
Typical Transient Thermal Characteristics
Gate threshold voltage
V
GS (th)
V
DS
= V
GS
, I
D
= 4.4mA
1.6 4.0 Ω2.8
Thermal resistance
Max.
-
Typ.Min.
Unit
°C/W
100
0.570.44
V
μA
2
1
Values
-
--1200
Gate - Source leakage current
V
DS
= 1200V, V
GS
= 0V
-
nA
T
j
= 150°C
T
j
= 25°C
V
GS
= +22V, V
DS
= 0V
--
-100 nA
-
-
10
-
Electrical characteristics (T
a
= 25°C)
Thermal resistance, junction - case
SymbolParameter
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Parameter
R
thJC
Gate - Source leakage current
I
GSS
V
GS
= -6V, V
DS
= 0V
I
GSS
Zero gate voltage
drain current
Drain - Source breakdown
voltage
Symbol
I
DSS
Unit
Max.Min.
Conditions
Values
Typ.
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
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TSQ50211-SCT2080KEHR
16.Nov.2018 - Rev.001
Datasheet