1 C3D10170H Rev. C, 01-2019
C3D10170
Silicon Carbide Schottky Diode
Z-Rec
®
Rectifier
Features
• 1700-Volt Schottky Rectier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Halogen-Free; RoHS Compliant
Benets
• Replace Bipolar with Unipolar Rectiers
• Essentially No Switching Losses
• Higher Eciency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Package
TO-247-2
Maximum Ratings (T
C
= 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
Repetitive Peak Reverse Voltage 1700 V
V
RSM
Surge Peak Reverse Voltage 1700 V
V
DC
DC Blocking Voltage 1700 V
I
F
Continuous Forward Current
29
14
10
A
T
C
=25˚C
T
C
=135˚C
T
C
=155˚C
I
FRM
Repetitive Peak Forward Surge Current
45
26
A
T
C
=25˚C, t
P
=10 ms, Half Sine Wave
T
C
=110˚C, t
P
=10 ms, Half Sine Wave
I
FSM
Non-Repetitive Peak Forward Surge
Current
55
41
A
T
C
=25˚C, t
P
=10ms, Half Sine Wave
T
C
=110˚C, t
P
=10 ms, Half Sine Wave
P
tot
Power Dissipation
231
100
W
T
C
=25˚C
T
C
=110˚C
∫i
2
dt i
2
t value
3.1
1.8
A
2
s
T
C
=25˚C, t
P
=10 ms
T
C
=110˚C, t
P
=10 ms
T
J
Operating Junction Range
-55 to
+175
˚C
T
stg
Storage Temperature Range
-55 to
+135
˚C
TO-247 Mounting Torque
1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
Part Number Package Marking
C3D10170H TO-247-2 C3D10170
PIN 1
PIN 2
CASE
V
RRM
` = 1700 V
I
F
(T
C
=135˚C) = 14 A
Q
c
= 76 nC
2 C3D10170H Rev. C, 01-2019
0
2
4
6
8
10
12
14
16
18
20
0 1 2 3 4 5 6 7
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
Forward Voltage
1.7
3
2
3.5
V
I
F
= 10 A T
J
=25°C
I
F
= 10 A T
J
=175°C
I
R
Reverse Current
20
100
60
300
μA
V
R
= 1700 V T
J
=25°C
V
R
= 1700 V T
J
=175°C
Q
C
Total Capacitive Charge 76 nC
V
R
= 1200 V, I
F
= 10 A
di/dt = 200 A/μs
T
J
= 25°C
C Total Capacitance
827
78
41
pF
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 800 V, T
J
= 25˚C, f = 1 MHz
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R
θJC
Thermal Resistance from Junction to Case 0.65 °C/W
Typical Performance
Figure 1. Forward Characteristics
0
1
2
3
4
5
0 250 500 750 1000 1250 1500 1750 2000 2250
Figure 2. Reverse Characteristics
I
F
(A)
V
F
(V)
I
R
(μA)
V
R
(V)
T
J
=-55°C
T
J
= 25°C
T
J
= 75°C
T
J
=125°C
T
J
=175°C
T
J
=-55°C
T
J
= 25°C
T
J
= 75°C
T
J
=125°C
T
J
=175°C