UNISONIC TECHNOLOGIES CO., LTD
UTT23N15
POWER MOSFET
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Copyright © 2017 Unisonic Technologies Co., Ltd QW-R209-294.A
23A, 150V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UTT23N15 is a N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with a
minimum on-state resistance, low gate charge and high switching
speed.
The UTC UTT23N15 is suitable for high voltage synchronous
rectifier and DC/DC converters, etc.
FEATURES
* R
DS(ON)
< 55 m @ V
GS
=10V, I
D
=15A
R
DS(ON)
< 60 m @ V
GS
=4.5V, I
D
=10A
* High Switching Speed
* High Cell Density Trench Technology
SYMBOL
ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen Free
Package
1 2 3
Packing
UTT23N15L-TA3-T UTT23N15G-TA3-T TO-220 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
UTT23N15 Power MOSFET
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ABSOLUTE MAXIMUM RATING (T
A
=25°, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
150 V
Gate-Source Voltage V
GSS
±20 V
Continuous I
D
23 A
Drain Current (T
C
=25°C)
Pulsed (Note 2) I
DM
60 A
Avalanche Energy (Note 3) Single Pulsed (Note 3) E
AS
52 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 5.2 V/nS
Power Dissipation T
C
=25°C P
D
100 W
Junction Temperature T
J
+150 °C
Storage Temperature Range T
STG
-55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=0.1mH, I
AS
=32.4A, V
DD
=50V, R
G
= 25, Starting T
J
= 25°C
4. I
SD
22A, di/dt 200A/µs, V
DD
V
(BR)DSS
, T
J
25°C
THERMAL RESI ST ANCES CHARACTERISTICS
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient
JA
62.5 °C/W
Junction to Case
JC
1.25 °C/W
ELECTRICAL CHARACTERISTICS (T
J
=25°, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
I
D
=250µA, V
GS
=0V 150 V
Drain-Source Leakage Current I
DSS
V
DS
=120V, V
GS
=0V 25 µA
Forward V
GS
=+20V, V
DS
=0V +100 nA
Gate-Source Leakage Current
Reverse
I
GSS
V
GS
=-20V, V
DS
=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
V
DS
=V
GS
, I
D
=250µA 1.0 3.0 V
V
GS
=10V, I
D
=15A 55 m
Static Drain-Source On-State Resistance R
DS(ON)
V
GS
=4.5V, I
D
=10A 60 m
DYNAMIC PARAMETERS
Input Capacitance C
ISS
2650 pF
Output Capacitance C
OSS
170 pF
Reverse Transfer Capacitance C
RSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
90 pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1) Q
G
60 nC
Gate to Source Charge
Q
GS
9 nC
Gate to Drain Charge Q
GD
V
DS
=120V, V
GS
=10V, I
D
=15A
I
G
=3mA (Note 1, 2)
16 nC
Turn-on Delay Time (Note 1) t
D(ON)
20 ns
Rise Time t
R
26 ns
Turn-off Delay Time t
D(OFF)
190 ns
Fall-Time t
F
V
DS
=75V, V
GS
=10V, I
D
=15A,
R
G
=25 (Note 1, 2)
90 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current I
S
22.2 A
Maximum Body-Diode Pulsed Current I
SM
60 A
Drain-Source Diode Forward Voltage (Note 1) V
SD
I
S
=15A, V
GS
=0V 1.3 V
Reverse Recovery Time (Note 1) t
rr
86 nS
Reverse Recovery Charge Q
rr
I
S
=22A, V
GS
=0V,
dI/dt=100A/s
0.26 nC
Notes: 1. Pulse Test : Pulse width 300s, Duty cycle 2%.
2. Essentially independent of operating temperature.