UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2018 Unisonic Technologies Co., Ltd QW-R206-024.I
HIGH FREQUENCY LOW NOISE
AMPLIFIER
DESCRIPTION
The UTC 2SC3356 is designed for such applications as: DC/DC
converters, supply line switching, battery charger, LCD backlighting,
peripheral drivers, Driver in low supply voltage applications (e.g.
lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
motors).
FEATURES
* Low Noise and High Gain
* High Power Gain
SOT-23
(EIAJ SC-59)
2
1
3
SOT-89
1
SOT-23-3
(JEDEC TO-236)
2
1
3
ORDERING INFORMATION
Ordering Number Pin Description
Lead Free Halogen Free
Package
1 2 3
Packing
2SC3356L-x-AE2-R 2SC3356G-x-AE2-R SOT-23-3 B E C Tape Reel
2SC3356L-x-AE3-R 2SC3356G-x-AE3-R SOT-23 B E C Tape Reel
2SC3356L-x-AB3-R 2SC3356G-x-AB3-R SOT-89 B C E Tape Reel
Note: Pin Assignment: B: Base E: Emitter C: Collector
2SC3356G-x-AE2-R
(1)Packing Type
(2)Package Type
(4)Green Package
(1) R: Tape Reel
(2) AE2: SOT-23-3, AE3: SOT-23
(4) G: Halogen Free and Lead Free, L: Lead Free
(3) x: refer to Classification of h
FE(3)Rank
MARKING
SOT-23-3/SOT-23
2SC3356L 2SC3356G
SOT-89
2SC3356 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R206-024.I
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage BV
CBO
20 V
Collector to Emitter Voltage BV
CEO
12 V
Emitter to Base Voltage BV
EBO
3 V
Collector Current I
C
100 mA
SOT-23-3
SOT-23
200 mW
Power Dissipation
SOT-89
P
D
500 mW
Junction Temperature T
J
+150 °С
Storage Temperature T
STG
-65 ~ +150 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
a
=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Base Breakdown Voltage BV
CBO
I
C
=10μA, I
E
=0 20 V
Collector to Emitter Breakdown Voltage BV
CEO
I
C
=1mA, R
BE
=∞ 12 V
Emitter to Base Breakdown Voltage BV
EBO
I
E
=10μA, I
C
=0 3 V
Collector-Base Cut-Off Current I
CBO
V
CB
=10V,I
E
=0 1.0 μA
Emitter-Base Cut-Off Current I
EBO
V
EB
=1 V, I
C
=0 1.0 μA
DC Current Gain h
FE
V
CE
=10 V, I
C
=20 mA 50 300
Gain Bandwidth Product f
T
V
CE
=10 V, I
C
=20 mA 7 GHz
Feed-Back Capacitance C
RE
V
CB
=10 V, I
E
=0, f =1.0MHz
1.0 pF
Noise Figure NF V
CE
=10 V, I
C
=7mA, f =1.0GHz 2.0 dB
CLASSIFICATION OF h
FE
RANK A B
RANGE 50-170 160-300