UNISONIC TECHNOLOGIES CO., LTD
MMBD7000
Preliminary DIODE
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Copyright © 2018 Unisonic Technologies Co., Ltd Ver.a
DUAL SURFACE MOUNT
SWITCHING DIODE
DESCRIPTION
The UTC MMBD7000 is dual surface mount switching diode,
designed for For general purpose switching application.
The devices is manufactured by the silicon epitaxial planar
process and packed in plastic surface mount package.
FEATURES
* High conductance
* Ultra-high speed
* Low forward voltage
* Fast reverse recovery time
SYMBOL
ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen-Free
Package
1 2 3
Packing
MMBD7000L-AE3-R MMBD7000G-AE3-R SOT-23 A1 K2 K1A2 Tape Reel
Note: Pin Assignment: A: Anode K: Cathode
(1) R: Tape Reel
(2) AE3: SOT-23
(3) G: Halogen Free and Lead Free, L: Lead Free
MMBD7000G-AE3-R
(1)Packing Type
(2)Package Type
(3)Green Package
MARKING
MMBD7000 Preliminary DIODE
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ABSOLUTE MAXIMUM RATINGS (T
A
=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Maximum Repetitive Reverse Voltage V
RRM
75 V
Average Rectified Forward Current I
F(AV)
300 mA
t=1.0μs2 A
Non-repetitive Peak Forward Surge Current
t=1.0s
I
FSM
1 A
Power Dissipation (Note 3) P
D
350 mW
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-65 ~ +150 °C
Note: 1. These ratings are based on a maximum junction temperature of 200°C.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. Device mounted on FR-4 PCB minimum land pad
THERMAL DATA
CHARACTERISTIC SYMBOL RATINGS UNIT
Junction to Ambient θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (T
A
=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Breakdown Voltage V
R
I
R
=100μA 75 V
I
F
=1mA 0.55 0.70 V
I
F
=10mA 0.67 0.82 V
I
F
=50mA 0.75 1.10 V
Forward Voltage V
F
I
F
=150mA 1.25 V
V
R
=20V 25 nA
V
R
=50V 1.0 μA
V
R
=50V, T
J
=125°C 100 μA
Reverse Current I
R
V
R
=100V 3.0 μA
Total Capacitance C
T
V
R
=0V, f =1.0MHz 2.0 pF
Reverse Recovery Time t
rr
I
F
=I
R
=10mA, I
RR
=0.1×I
R
, R
L
=100Ω 4.0 ns