1 C5D05170H Rev. 0, 12-2018
C5D05170H
Silicon Carbide Schottky Diode
Z-Rec
®
Rectifier
Features
• 1.7kV Schottky Rectier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching
• Extremely Fast Switching
• Positive Temperature Coecient on V
F
Benets
• Replace Bipolar with Unipolar Rectiers
• Essentially No Switching Losses
• Higher Eciency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters
• 1500V Solar Inverter
Package
TO-247-2
Maximum Ratings (T
C
=25°C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
Repetitive Peak Reverse Voltage 1700 V
V
R
DC Peak Reverse Voltage 1700 V
I
F
Continuous Forward Current
18
8.8
5.0
A
T
C
=25˚C
T
C
=135˚C
T
C
=160˚C
Fig. 3
I
FRM
Repetitive Peak Forward Surge Current
30
16
A
T
C
=25˚C, t
P
=10 ms, Half Sine Pulse
T
C
=110˚C, t
P
=10 ms, Half Sine Pulse
I
FSM
Non-Repetitive Forward Surge Current
32
24
A
T
C
=25˚C, t
P
=10 ms, Half Sine Pulse
T
C
=110˚C, t
P
=10 ms, Half Sine Pulse
P
tot
Power Dissipation
115
50
W
T
C
=25˚C
T
C
=110˚C
Fig. 4
T
J
, T
stg
Operating Junction and Storage Temperature
-55 to
+175
˚C
TO-247 Mounting Torque
1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
Part Number Package Marking
C5D05170H TO-247-2 C5D05170
PIN 1
PIN 2
CASE
V
RRM
= 1700 V
I
F,
(T
C
=135˚C) = 8.8 A
Q
c
 =69nC
2 C5D05170H Rev. 0, 12-2018
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
Forward Voltage
1.5
2.2
1.8
2.5
V
I
F
= 5 A T
J
=25°C
I
F
= 5 A T
J
=175°C
Fig. 1
I
R
Reverse Current
20
120
200
300
μA
V
R
= 1700 V T
J
=25°C
V
R
= 1700 V T
J
=175°C
Fig. 2
Q
C
Total Capacitive Charge 69 nC
V
R
= 1700 V, I
F
= 5A
di/dt = 200 A/μs
T
J
= 25°C
Fig. 5
C Total Capacitance
425
34
33
pF
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 800 V, T
J
= 25˚C, f = 1 MHz
V
R
= 1700 V, T
J
= 25˚C,f = 1 MHz
Fig. 6
E
C
Capacitance Stored Energy 49 μJ V
R
= 1700 V Fig. 7
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
R
θJC
Thermal Resistance from Junction to Case 1.3 °C/W Fig. 8
Typical Performance
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
V
F
(V) V
R
(V)
I
R
(mA)
V
F
(V)
I
R
(uA)
V
R
(V)
0
100
200
300
400
500
600
700
800
900
1,000
1200 1400 1600 1800 2000
Reverse Leakage Current, I
RR
(uA)
Reverse Voltage, V
R
(V)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
J
= -55
°C
T
J
= 25 °C
I
R
(μA)
V
R
(V)
0
1
2
3
4
5
6
7
8
9
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Foward Current, I
F
(A)
Foward Voltage, V
F
(V)
T
J
= -55°C
T
J
= 25°C
T
J
= 75°C
T
J
= 175°C
T
J
= 125°C
I
F
(A)
V
F
(V)