GLASS PASSIVATED SUPER FAST
SILICON S
URFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Resistive o
r inductive load.
EDB101S
THRU
EDB107S
DB-S
Dimensions in inches and (millimeters)
FEATURES
* Surge overload rating - 40 amperes peak
* I
deal for printed circuit board
* R
eliable low cost construction utilizing molded
* G
lass passivated device
*P
olarity symbols molded on body
*M
ounting position: Any
* W
eight: 1.0 gram
* E
poxy: Device has UL flammability classification 94V-O
MECHANICAL DATA
0.115
(
2.9
)
0.135
(
3.4
)
.255
(
6.5
)
.310
(
7.9
)
.290
(
7.4
)
.245
(
6.2
)
.042
(
1.1
)
.038
(
1.0
)
.013
(
.330
)
.009
.003
(
.076
)
.410
(
10.4
)
.060
(
1.524
)
.040
(
1.016
)
.360
(
9.4
)
(
0.229
)
.346
(8.8)
.307
(7.8)
.195
(
5.0
)
.205
(
5.2
)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
2016-04
REV: D
RATINGS
Maximum R
ecurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum D
C Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed o
n rated load (JEDEC method)
Operating an
d Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
T
J,
T
STG
V
RMS
Volts
Volts
A
mps1.0
30
-
55 t
o + 150
0
C
pF
UNITS
Maximum Average Forward Output Current at T
A
= 55
o
C
50 150 200100 300 400
35 105 14070 210 280
Volts
Amps
E
DB101S E
DB103S EDB104SEDB102S EDB105S EDB106S
EDB101S E
DB103S EDB104SEDB102S EDB105S EDB106S
50 150 200100 300 400
DC Blocking Voltage per element
CHARACTERISTICS
V
trr
F
SYMBOL
I
R
UNITS
1.05 1
.35
100 MA
mps
nSec
MA
mps
at 1
.0A DCMaximum Forward Voltage
Maximum R
everse Recovery Time (Note 1)
Volts
@T
A
= 25
o
C
@T
A
= 100
o
C
5.0
R
Q
JA
0
C/W
R
Q
JL
Typical Thermal Resistance (Note 3)
Note: 1
.Test Conditions: I
F
=0.5A,I
R
=-1.0A,I
RR
=-0.25A.
2.Measured a
t 1MHz and applied reverse voltage of 4.0 volts.
3.Thermal R
esistance : Mounted on PCB.
38
12
50
C
J
Typical Junction Capacitance (Note 2)
15 10
Maximum R
everse Current at Rated
Typical Current Square Time
I
2
T A
2
S
3.7
EDB107S
600
6
00
4
20
EDB107S
1.70
LEAD TEMPERATURE, (
2
&
RATING AND CHARACTERISTICS CURVES ( EDB101S THRU EDB107S )
FIG.2 TYPICAL FORWARD CURRENT
FIG.2 TYPICAL FORWARD CURRENT
DERATING CURVE
DERATING CURVE
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.3 TYPICAL REVERSE
FIG.3 TYPICAL REVERSE
CHARACTERISTICS
CHARACTERISTICS
WUU
+0.5A
NONINDUCTIVE
NONINDUCTIVE
0
-0.25A
-1.0A
FP
SET TIME BASE FOR 10 ns/cm
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
'87
25 Vdc
(appro [
���
NON-
INDUCTIVE
OSCILLOSC23(
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
7
$
2
&
7
$
2
&
7
7
EVAARG FEO )A(,TNERRUCDRAWR
IN TSNATAEN OUS ,TNERRUCESREVER()Au