SENSITRON
SEMICONDUCTOR
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SD040SD15A/B
Technical Data
Data Sheet 4955, Rev.-
SILICON SCHOTTKY RECTIFIER DIE
Extremely Low Forward Voltage Drop
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
• Electrically / Mechanically Stable during and after Packaging
Maximum Ratings
(1)
:
Electrical Characteristics
(1)
:
(1) in SHD package
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage V
RWM
- 15 V
Max. Average Forward Current I
F(AV)
50% duty cycle, rectangular
wave form
1 A
Max. Peak One Cycle Non-
Repetitive Surge Current
I
FSM
8.3 ms, half Sine wave 20 A
Non-Repetitive Avalanche
Energy
E
AS
T
J
= 25 °C, I
AS
= 0.74 A,
L = 12 mH
3.2 mJ
Repetitive Avalanche Current I
AR
I
AS
decay linearly to 0 in 1 µs
ƒ limited by T
J
max V
A
=1.5V
R
0.74 A
Max. Junction Temperature T
J
- -65 to +100 °C
Max. Storage Temperature T
stg
- -65 to +100 °C
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop V
F1
@ 1A, Pulse, T
J
= 25 °C 0.37 V
V
F2
@ 1A, Pulse, T
J
= 100 °C 0.33 V
Max. Reverse Current I
R1
@V
R
= 45V, Pulse,
T
J
= 25 °C
0.5 mA
I
R2
@V
R
= 45V, Pulse,
T
J
= 100 °C
25 mA
Max. Junction Capacitance C
T
@V
R
= 5V, T
C
= 25 °C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
80 pF
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SD040SD15A/B
Technical Data
Data Sheet 4955, Rev.-
Mechanical Dimensions: In Inches / mm
Bottom side metalization Ag - 30 kÅ minimum.
Top side metalization Al - 25 kÅ minimum
or Ag - 30 kÅ minimum.
Bottom side is cathode, top side is anode.
Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top;
Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top.
H
0.034 ± 0.003
(0.86
±
0.077)
0.040 ± 0.003
(1.02
±
0.077)
0.0 0.1 0.2 0.3 0.4
Forward Voltage Drop - V
F
(V)
10
-3
10
-2
10
-1
10
0
Instantaneous Forward Current - I
F
(A)
Typical Forward Characteristics
75°C
100 °C
25 °C
0 2 4 6 8 10 12 14 16
Reverse Voltage - V
R
(V)
10
-1
10
0
10
1
Instantaneous Reverse Current - I
R
(mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
2 4 6 8 10 12 14 16
Reverse Voltage - V
R
(V)
40
48
56
64
72
80
Junction Capacitance - C
T
(pF)
Typical Junction Capacitance
25 °C