CHA8610-99F
Ref. : DSCHA86108296 - 23 Oct 18
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
15W X Band High Power Amplifier
GaN Monolithic Microwave IC
Description
The CHA8610-99F is a two stage High
Power Amplifier operating between 8.5 and
11GHz and providing typically 15W of
saturated output power and 40% of Power
Added Efficiency.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
Pout and PAE versus frequency for Pulsed mode
■ Frequency range: 8.5-11GHz
■ High output power: 15W
■ High PAE: 40%
■ Linear Gain: 24dB
■ DC bias: Vd=30Volt @Id=0.68A
■ Chip size 5.08x2.75x0.1mm
■ Available in bare die
Main Electrical Characteristics (Pulsed mode)
Tamb.= +25°C; Vd = +30V Pulse width = 25µs Duty cycle = 10%
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.5
11
GHz
Gain
Linear Gain
24
dB
Pout
Output Power
15
W
PAE
Associated Power Added Efficiency.
40
%
In Out
V+
V-
STG1 STG2
0
5
10
15
20
25
30
35
40
45
50
35
36
37
38
39
40
41
42
43
44
45
8 8.5 9 9.5 10 10.5 11 11.5
Power added efficiency (%)
Output power (dBm)
Frequency (GHz)
Pout @ Pin=23dBm
PAE @ Pin=23dBm
CHA8610-99F
15W X Band High Power Amplifier
Ref. : DSCHA86108296 - 23 Oct 18
2/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Electrical Characteristics (Pulsed mode)
Tamb.= +25°C, Vd = +30V Pulse width = 25µs Duty cycle = 10%
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.5
11
GHz
Gain
Linear Gain
24
dB
Pout
Output Power (Pin=23dBm)
15
W
PAE
Associated Power Added Efficiency
(Pin=23dBm)
40
%
Id
Associated current (Pin=23dBm)
1.5
A
IRL
Input Return Loss
10
dB
ORL
Output Return Loss
8
dB
Idq
Quiescent Current
0.68
A
Vd
Drain Voltage
30
V
Vg
Gate Voltage
-3.2
V
These values are representative of measurements done in test fixture with a bonding wire of
typically 0.25 to 0.3nH.
Electrical Characteristics (CW mode)
Tamb.= +25°C, Vd = +30V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
8.5
11
GHz
Gain
Linear Gain
23
dB
Pout
Output Power (Pin=24dBm)
14
W
PAE
Associated Power Added Efficiency
(Pin=24dBm)
37.5
%
Id
Associated current (Pin=24dBm)
1.3
A
IRL
Input Return Loss
10
dB
ORL
Output Return Loss
8
dB
Idq
Quiescent Current
0.45
A
Vd
Drain Voltage
30
V
Vg
Gate Voltage
-3.5
V
These values are representative of measurements done in test fixture with a bonding wire of
typically 0.25 to 0.3nH.