© Won-Top Electronics Co., Ltd. www.wontop.com
Revision: September, 2012 1
Pb
Features
Diffused Junction
Low Forward Volt age Drop
High Surge Current Capability A
B A
High Reliability
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diod
es
Mechanical Data C
Case: R-1, Molded Plastic D
Terminals: Plated Leads Solderabl
e per
MIL-STD-2
02, Method 208
Polarity: Cathode Band
Weight: 0.181 grams (approx.)
Mountin
g Position:
Any
Marking:
Type Number
Lead Free: For RoHS / Lead Free Vers
ion,
Add “-LF”
Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
V
R
50 100 200 300 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 210 280 420 560 700 V
Average Rectified Output Current (Note 1) @T
A
= 55°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
I
FSM 30 A
Forward Voltage @I
F
= 1.0A VFM 1.0 1.3 1.7 V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
5.0
100
µA
Reverse Recovery Time (Note 2) t
rr
50 75 nS
Typical Junction Capacitance (Note 3) CJ 20 15 pF
Typical Thermal Resistance Junction to Ambient (Note 1)
Typical Thermal Resistance Junction to Lead (Note 1)
RθJA
RθJL
60
20
°C/W
Operating Temperature Range TJ -65 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured
with I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A.
3. Measured at 1
.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1H1 – 1H8
1.0A ULTRAFAST DIODE
WON-TOP ELECTRONICS
®
R-1
Dim Min Max
A 20.0 —
B 2.90 3.50
C 0.53 0.64
D 2.20 2.60
All Dimensions in mm
www.wontop.com © Won-Top Electronics Co., Ltd.
2 Revision: September, 2012
1H1 – 1H8
WON-TOP ELECTRONICS
®
0
T
A
, AMBIENT TEMPERA TURE (°C)
Fig. 1 Forward Current Derating Curve
15 30 45 60 75 90 105 120 135 150
0
0.2
0.4
0.6
0.8
1.0
I
(AV)
, AVERAGE FORWARD RECTIFIED CURRENT (A)
Resistive or
Inductive Load
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
0.4 0.8 1.2 1.6 2.0
0.01
0.1
1.0
10
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
10 100
0
6
12
18
24
30
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
20 40 60 80 100 120 140
0.01
0.1
1.0
10
100
1000
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
Single Half-Sine-Wave
JEDEC Method
T
A
= 25°C
0.1
V
R
, DC REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
1 10 100
0
C
J
, JUNCTION CAPACITANCE (pF)
f = 1MHz
10
20
30
40
50
T
A
= 100°C
1H1 – 1H4
1H5
1H6 – 1H8
1H1 – 1H5
1H6 – 1H8