© Won-Top Electronics Co., Ltd. www.wontop.com
Revision: September, 2012 1
Pb
Features
Schottky Barrier Chip B
Guard Ring for Tran sient Protectio
n
Low Forward Voltage Drop C
Low Power Loss, High Efficiency
High Surge Current Capability G
A
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
PIN1 3
SMPS, Inverters and
As Free Wheeling Diodes
D
Mechanical Data F E
Case: TO-220A, Molded Plastic
Terminals: Plated Leads Solderable
per
P
MIL-STD-202, Method 208
Polarity: See Diagram I
Weight: 1.9 gram s (a
pprox.)
Mounting Position:
Any
H L
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Vers
ion,
Add “-LF”
Suffix to Part Number, See Page 4
PIN 1
J PIN 3 Case
K
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
S
ymbol
SB
1020
SB
1030
SB
1040
SB
1045
SB
1050
SB
1060
SB
1080
SB
10100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
V
R
20 30 40 45 50 60 80 100 V
RMS Reverse Voltage VR(RMS) 14 21 28 32 35 42 56 70 V
Average Rectified Output Current @T
C
= 100°C IO 10 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
I
FSM 150 A
Forward Voltage @I
F
= 10A VFM 0.55 0.75 0.85 V
Peak Reverse Current @T
J
= 25°C
At Rated DC Blocking Voltage @T
J
= 100°C
I
RM
0.2
20
mA
Typical Junction Capacitance (Note 1) CJ 450 350 pF
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
RθJA
RθJC
73
2.0
°C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB1020 – SB10100
10A SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
®
TO-220A
Dim Min Max
A 13.90 15.90
B 9.80 10.70
C 2.54 3.43
D 3.56 4.56
E 12.70 14.73
F 0.51 0.96
G 3.55 Ø 4.09 Ø
H 5.75 6.85
I 4.16 5.00
J 2.03 2.92
K 0.30 0.65
L 1.14 1.40
P 4.83 5.33
All Dimensions in mm