© Won-Top Electronics Co., Ltd. www.wontop.com
Revision: September, 2012 1
Pb
Features
Schottky Barrier Chip B
Guard Ring for Transient Protectio
n
Low Forward Voltage Drop C
Low Power Loss, High Efficiency
High Surge Current Capability G
A
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
PIN1 2 3
SMPS, Inverters and
As Free Wheeling Diodes
D
Mechanical Data F E
Case: ITO-220, Full Molded Plastic
Terminals: Plated Leads Solderable
per
P
MIL-STD-202, Method 208
Polarity: See Diagram I
Weight: 1.9 gram s (approx.)
Mounting Position:
Any
H L
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Vers
ion,
Add “-LF”
Suffix to Part Number, See Page 4
PIN 1
J PIN 3 PIN 2
K
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
S
ymb
ol
SB
1020FCT
SB
1030FCT
SB
1040FCT
SB
1045FCT
SB
1050FCT
SB
1060FCT
SB
1080FCT
SB
10100FCT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
V
R
20 30 40 45 50 60 80 100 V
RMS Reverse Voltage VR(RMS) 14 21 28 32 35 42 56 70 V
Average Rectified Output Current Total Device
@T
C
= 100°C Per Diode
I
O
10
5.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
I
FSM 150 A
Forward Voltage per diode @I
F
= 5.0A VFM 0.55 0.75 0.85 V
Peak Reverse Current @T
J
= 25°C
At Rated DC Blocking Voltage @T
J
= 100°C
I
RM
0.2
20
mA
Typical Junction Capacitance (Note 1) CJ 450 350 pF
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
RθJA
RθJC
62
4.0
°C/W
RMS Isolation Voltage, t = 1 min VISO 1500 V
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB1020FCT – SB10100FCT
10A DUAL SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
®
ITO-220
Dim Min Max
A 14.60 15.40
B 9.70 10.30
C 2.55 2.85
D — 4.16
E 13.00 13.80
F 0.50 0.75
G 3.00 Ø 3.50 Ø
H 6.30 6.90
I 4.20 4.80
J 2.50 2.90
K 0.50 0.75
L 2.60 3.30
P 2.29 2.79
All Dimensions in mm
www.wontop.com © Won-Top Electronics Co., Ltd.
2 Revision: September, 2012
SB1020FCT – SB10100FCT
WON-TOP ELECTRONICS
®
0
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
15 30 45 60 75 90 105 120 135 150
0
2
4
6
8
10
I
(AV)
, AVERAGE FORWARD RECTIFIED CURRENT (A)
Resistive or
Inductive Load
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
0.2 0.4 0.6 0.8 1.0
0.1
1.0
10
100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
10 100
0
30
60
90
120
150
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
0.001
0.01
0.1
1.0
10
100
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
Single Half-Sine-Wave
JEDEC Method
0.1
V
R
, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
1 10 100
0
C
J
, JUNCTION CAPACITANCE (pF)
f = 1MHz
300
600
900
1200
1500
0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
2 3 5
P
D
, POWER DISSIPATION (W)
0
0.8
1.6
2.4
3.2
4.0
1 6
Puls e W idth = 300µs
1% Duty Cycle
T
J
= 25°C
4
20 40 60 80 100 120 140
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
1050FCT – 10100FCT
1020FCT – 1045FCT
0.4
1.2
2.0
2.8
3.6
1020FCT – 1045FCT
1080FCT – 10100FCT
1080FCT ��� 10100FCT
1020FCT – 1045FCT
1050FCT – 1060FCT
DC, T
J
= 150°C
Per Diode
1050FCT – 1060FCT