© Won-Top Electronics Co., Ltd. www.wontop.com
Revision: September, 2012 1
Pb
Features
Schottky Barrier Chip B
Guard Ring for Transient Protectio
n
Low Forward Voltage Drop C
Low Power Loss, High Efficiency
High Surge Current Capability G
A
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
PIN1 3
SMPS, Inverters and
As Free Wheeling Diodes
D
Mechanical Data F E
Case: ITO-220A, Full Molded Plastic
Terminals: Plated Leads Solderable
per
P
MIL-STD-202, Method 208
Polarity: See Diagram I
Weight: 1.9 gram s (a
pprox.)
Mounting Position:
Any
H L
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Vers
ion,
Add “-LF”
Suffix to Part Number, See Page 4
PIN 1
J PIN 3
K
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
S
ymbol
SB
1020F
SB
1030F
SB
1040F
SB
1045F
SB
1050F
SB
1060F
SB
1080F
SB
10100F
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
V
R
20 30 40 45 50 60 80 100 V
RMS Reverse Voltage VR(RMS) 14 21 28 32 35 42 56 70 V
Average Rectified Output Current @T
C
= 100°C IO 10 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
I
FSM 150 A
Forward Voltage @I
F
= 10A VFM 0.55 0.75 0.85 V
Peak Reverse Current @T
J
= 25°C
At Rated DC Blocking Voltage @T
J
= 100°C
I
RM
0.2
20
mA
Typical Junction Capacitance (Note 1) CJ 450 350 pF
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
RθJA
RθJC
75
4.0
°C/W
RMS Isolation Voltage, t = 1 min VISO 1500 V
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB1020F – SB10100F
10A SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
®
ITO-220A
Dim Min Max
A 14.60 15.40
B 9.70 10.30
C 2.55 2.85
D — 4.16
E 13.00 13.80
F 0.30 0.90
G 3.00 Ø 3.50 Ø
H 6.30 6.90
I 4.20 4.80
J 2.50 2.90
K 0.36 0.80
L 2.60 3.30
P 4.83 5.33
All Dimensions in mm
www.wontop.com © Won-Top Electronics Co., Ltd.
2 Revision: September, 2012
SB1020F – SB10100F
WON-TOP ELECTRONICS
®
0
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
15 30 45 60 75 90 105 120 135 150
0
2
4
6
8
10
I
(AV)
, AVERAGE FORWARD RECTIFIED CURRENT (A)
Resistive or
Inductive Load
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
0.2 0.4 0.6 0.8 1.0
0.1
1.0
10
100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
10 100
0
30
60
90
120
150
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
0.001
0.01
0.1
1.0
10
100
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
Single Half-Sine-Wave
JEDEC Method
0.1
V
R
, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
1 10 100
0
C
J
, JUNCTION CAPACITANCE (pF)
f = 1MHz
300
600
900
1200
1500
0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
4 6 10
P
D
, POWER DISSIPATION (W)
0
2
4
6
8
10
2 12
Puls e W idth = 300µs
1% Duty Cycle
T
J
= 25°C
8
20 40 60 80 100 120 140
1
3
5
7
9
DC, T
J
= 150°C
1080F – 10100F
1050F – 1060F
1020F – 1045F
T
J
= 25°C
T
J
= 75°C
T
J
= 100°C
1050F – 10100F
1020F – 1045F
1020F – 1045F
1080F – 10100F
1050F – 1060F