© Won-Top Electronics Co., Ltd. www.wontop.com
Revision: September, 2012 1
Pb
Features
Schottky Barrier Chip B
Guard Ring for Transient Protectio
n
Low Forward Voltage Drop C
Low Power Loss, High Efficiency
High Surge Current Capability G
A
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
PIN1 2 3
SMPS, Inverters and
As Free Wheeling Diodes
D
Mechanical Data F E
Case: TO-220, Molded Plastic
Terminals: Plated Leads Solderable
per
P
MIL-STD-202, Method 208
Polarity: See Diagram I
Weight: 1.9 gram s (approx.)
Mounting Position:
Any
H L
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Vers
ion,
Add “-LF”
Suffix to Part Number, See Page 4
PIN 1 PIN 2
J PIN 3 Case
K
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
S
ymbol
SB
1020CT
SB
1030CT
SB
1040CT
SB
1045CT
SB
1050CT
SB
1060CT
SB
1080CT
SB
10100CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
V
R
20 30 40 45 50 60 80 100 V
RMS Reverse Voltage VR(RMS) 14 21 28 32 35 42 56 70 V
Average Rectified Output Current Total Device
@T
C
= 100°C Per Diode
I
O
10
5.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
I
FSM 150 A
Forward Voltage per diode @I
F
= 5.0A VFM 0.55 0.75 0.85 V
Peak Reverse Current @T
J
= 25°C
At Rated DC Blocking Voltage @T
J
= 100°C
I
RM
0.2
20
mA
Typical Junction Capacitance (Note 1) CJ 450 350 pF
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
RθJA
RθJC
60
2.0
°C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB1020CT – SB10100CT
10A DUAL SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
®
TO-220
Dim Min Max
A 13.90 15.90
B 9.80 10.70
C 2.54 3.43
D 3.56 4.56
E 12.70 14.73
F 0.51 0.96
G 3.55 Ø 4.09 Ø
H 5.75 6.85
I 4.16 5.00
J 2.03 2.92
K 0.30 0.65
L 1.14 1.40
P 2.29 2.79
All Dimensions in mm
www.wontop.com © Won-Top Electronics Co., Ltd.
2 Revision: September, 2012
SB1020CT – SB10100CT
WON-TOP ELECTRONICS
®
0
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
15 30 45 60 75 90 105 120 135 150
0
2
4
6
8
10
I
(AV)
, AVERAGE FORWARD RECTIFIED CURRENT (A)
Resistive or
Inductive Load
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
0.2 0.4 0.6 0.8 1.0
0.1
1.0
10
100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
10 100
0
30
60
90
120
150
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
0.001
0.01
0.1
1.0
10
100
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
Single Half-Sine-Wave
JEDEC Method
0.1
V
R
, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
1 10 100
0
C
J
, JUNCTION CAPACITANCE (pF)
f = 1MHz
300
600
900
1200
1500
0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
2 3 5
P
D
, POWER DISSIPATION (W)
0
0.8
1.6
2.4
3.2
4.0
1 6
Puls e W idth = 300µs
1% Duty Cycle
T
J
= 25°C
4
20 40 60 80 100 120 140
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
1050CT – 10100CT
1020CT – 1045CT
0.4
1.2
2.0
2.8
3.6
1020CT – 1045CT
1080CT – 10100CT
1050CT – 1060CT
1080CT – 10100CT
1020CT – 1045CT
1050CT – 1060CT
DC, T
J
= 150°C
Per Diode