© Won-Top Electronics Co., Ltd. www.wontop.com
Revision: April, 2012 1
Pb
Features
Very Low Capacitance L
Low Forward Volt
age
A
PN Junction Guard Ring for Transient a
nd
E
SD Protection
For General Purpose Switching Applicat
ions
B C
Plastic Material – UL Recognition Flamm
ability
C
lassification 94V-0 M
E D
H
Mechanical Data
Case: SOT-323, Molded Plastic K
Terminals: Plated Leads Solderable per J
MIL-STD-202, Method 208 G
Polarity: See Diagram
Weight: 0.006 grams (approx.)
Mountin
g Position: Any
Marking: M5
Lead Free: For RoHS / Lead Free Vers
ion,
Add “-LF”
Suffix to Part Number
, See Page 4
TOP VIEW
Maximum Ratings @T
A
=25°C unless otherwise specified
Characteristic
S
ymb
ol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
V
R
7.0 V
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Thermal Characteristics
Charact
eristic
S
ymb
ol
Value
Unit
Power Dissipation (Note 1) PD 200 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 °C/W
Note:
1. Mounted on FR-4 PC board with minimum recommended pad layout.
MMBD352W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
WON-TOP ELECTRONICS
®
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.40
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J — 0.10
K 0.90 1.10
L 0.25 —
M 0.05 0.15
All Dimensions in mm
www.wontop.com © Won-Top Electronics Co., Ltd.
2 Revision: April, 2012
Electrical Characteristics @T
A
=25°C unless otherwise specified
Characteristic Symbol Min. Typ. Max. Unit
Reverse Breakdown Voltage @ IR = 10µA V(BR) 7.0 V
Forward Voltage Drop @ IF = 10mA VF 0.6 V
Reverse Leakage Current @ VR = 3.0V
@ V
R = 7.0V
I
R
0.25
10
µA
Diode Capacitance (VR = 0V, f = 1.0MHz) C
D
1.0 pF
MMBD352W
WON-TOP ELECTRONICS
®
0
T
A
, AMBIENT TEMPERA TURE (°C)
Fig. 1 Power Derating Curve
30 60 90 120 150
0
50
100
150
200
250
P
D
, POWER DISSIPATION (mW)
0.3
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteris tics
0.4 0.5 0.6 0.7 0.8
0.1
1.0
10
100
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
V
R
, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
0.5
0.6
0.7
0.8
0.9
1.0
C
T
, TOTAL CAPACITA NCE (pF)
0
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
0.6 1.2 1.8 2.4 3.0
0.1
1.0
10
100
1000
10000
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
0
1
2
3 4 5
f = 1.0MHz
T
A
= 25°C
T
A
= 100°C
T
A
= 75°C
T
A
= -40°C
T
A
= 85°C
T
A
= 25°C