© Won-Top Electronics Co., Ltd. www.wontop.com
Revision: April, 2012 1
Pb
Features
Very Low Capacitance L
Low Reverse Leakage A
PN Junction Guard Ring for Transient a
nd
E
SD Protection
For General Purpose Switching Applicat
ions
B C
Plastic Material – UL Recognition Flamm
ability
C
lassification 94V-0 M
E D
H
Mechanical Data
Case: SOT-323, Molded Plastic K
Terminals: Plated Leads Solderable per J
MIL-STD-202, Method 208 G
Polarity: See Diagram
Weight: 0.006 grams (approx.)
Mountin
g Position: Any
Marking: 4T
Lead Free: For RoHS / Lead Free Vers
ion,
Add “-LF”
Suffix to Part Number
, See Page 4
TOP VIEW
Maximum Ratings @T
A
=25°C unless otherwise specified
Characteristic
S
ymb
ol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
V
R
30 V
Forward Continuous Current IF 200 mA
Non-Repetitive Peak Forward Surge Current, 60Hz IFSM 1.0 A
Operating Temperature Range TJ -55 to +125 °C
Storage Temperature Range TSTG -55 to +150 °C
Thermal Characteristics
Charact
eristic
S
ymb
ol
Value
Unit
Power Dissipation (Note 1) PD 120 mW
Note:
1. Mounted on FR-4 PC board with minimum recommended pad layout.
MMBD330
SURFACE MOUNT SCHOTTKY BARRIER DIODE
WON-TOP ELECTRONICS
®
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.40
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J — 0.10
K 0.90 1.10
L 0.25 —
M 0.05 0.15
All Dimensions in mm
www.wontop.com © Won-Top Electronics Co., Ltd.
2 Revision: April, 2012
Electrical Characteristics @T
A
=25°C unless otherwise specified
Characteristic Symbol Min. Typ. Max. Unit
Reverse Breakdown Voltage @ IR = 10µA V(BR) 30 V
Forward Voltage Drop @ IF = 1.0mA
@ I
F = 10mA
V
F
0.38
0.52
0.45
0.60
V
Reverse Leakage Current @ VR = 25V IR 13 200 nA
Diode Capacitance (VR = 0V, f = 1.0MHz) C
D
0.9 1.5 pF
Toal Capacitance (VR = 15V, f = 1.0MHz) C
T
0.9 1.5 pF
MMBD330
WON-TOP ELECTRONICS
®
0
T
A
, AMBIENT TEMPERA TURE (°C)
Fig. 1 Power Derating Curve
25 50 75 100 125
0
30
60
90
120
150
P
D
, POWER DISSIPATION (mW)
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteris tics
0.2 0.4 0.6 0.8 1.0
0.1
1.0
10
100
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
V
R
, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
0
0.5
1.0
1.5
2.0
2.5
C
T
, TOTAL CAPACITA NCE (pF)
0
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
6 12 18 24 30
0.1
1.0
10
100
1000
10000
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
0
6
12
18 24 30
f = 1.0MHz
T
A
= 25°C
T
A
= 100°C
T
A
= 75°C
T
A
= -40°C
T
A
= 85°C
T
A
= 25°C