© Won-Top Electronics Co., Ltd. www.wontop.com
Revision: September, 2012 1
Pb
Features
Low Forward Voltage
Epitaxial Construction with Oxide Passiv
ation
B
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 50A Peak D
Low Power Loss
A
Fast Switching F
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diod
es
C H G
E
Mechanical Data
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderabl
e
per MIL
-STD-750, Method
2026
Polarity: Cathode Band or Catho
de Notch
Marking: Device Code, See Page 3
Weight: 0.064 gram s (approx.)
Lead Free: For RoHS / Lead Free Vers
ion,
Add “-LF”
Suffix to Part Number, See Page 4
Maximum Ratings @T
A
=25°C unless otherwise specified
Characteristic
S
ymbol SR2150 SR2200
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
V
R
150 200 V
RMS Reverse Voltage VR(RMS) 105 140 V
Average Rectified Output Current (Note 1) IO 2.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
I
FSM 50 A
Forward Voltage @I
F
= 2.0A VFM 0.9 V
Peak Reverse Current @T
J
= 25°C
At Rated DC Blocking Voltage @T
J
= 100°C
I
RM
0.2
5.0
mA
Typical Junction Capacitance (Note 2) CJ 55 pF
Thermal Resistance, Junction to Ambient (Note 1)
Thermal Resistance, Junction to Lead (Note 1)
RθJA
RθJL
88
25
°C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Note: 1. Mounted on FR-4 PCB with 5.0 x 5.0mm copper pads.
2. Measured at 1
.0 MHz and applied reverse voltag
e of 4.0V D.C.
SR2150 – SR2200
2.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE
WON-TOP ELECTRONICS
®
SMA/DO-214AC
Dim Min Max
A 2.29 2.92
B 4.00 4.60
C 1.27 1.90
D 0.152 0.305
E 4.80 5.30
F 2.00 2.44
G 0.051 0.203
H 0.76 1.52
All Dimensions in mm
www.wontop.com © Won-Top Electronics Co., Ltd.
2 Revision: September, 2012
SR2150 – SR2200
WON-TOP ELECTRONICS
®
0
T
L
, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
15 30 45 60 75 90 105 120 135 150
0
0.5
1.0
1.5
2.0
2.5
I
(AV)
, AVERAGE FORWARD RECTIFIED CURRENT (A)
Resistive or
Inductive Load
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteris tics
0.2 0.4 0.6 0.8 1.0
0.01
0.1
1.0
10
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
10 100
0
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
100
0.1
1.0
10
100
1000
10000
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
Single Half-Sine-Wave
JEDEC Method
1
V
R
, DC REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
10 100 1000
0
C
J
, JUNCTION CAPACITANCE (pF)
f = 1MHz
20
40
60
80
100
20 40 60 80
T
J
= 25°C
T
J
= 125°C
T
J
= 75°C
10
20
30
40
50
Puls e W idth = 300µs
1% Duty Cycle
T
A
= 25°C
T
A
= 85°C
T
A
= 125°C