Si photodiodes
S1336 series
UV to near IR for precision photometry
www.hamamatsu.com
1
Analytical instrumentsHigh sensitivity in UV range
Optical measurement equipment
Low capacitance
High reliability
Features Applications
Structure / Absolute maximum ratings
Type no.
Dimensional
outline/
Window material*
1
Package
Photosensitive
area size
Absolute maximum ratings
Reverse voltage
V
R max
Operating
temperature
Topr
Storage
temperature
Tstg
(mm) (V) (°C) (°C)
S1336-18BQ*
2
(1)/Q
TO-18 1.1 × 1.1
5
-20 to +60 -55 to +80
S1336-18BK (2)/K
-40 to +100 -55 to +125
S1336-5BQ*
2
(3)/Q
TO-5
2.4 × 2.4
-20 to +60 -55 to +80
S1336-5BK (4)/K
-40 to +100 -55 to +125
S1336-44BQ*
2
(5)/Q
3.6 × 3.6
-20 to +60 -55 to +80
S1336-44BK (6)/K
-40 to +100 -55 to +125
S1336-8BQ*
2
(7)/Q
TO-8 5.8 × 5.8
-20 to +60 -55 to +80
S1336-8BK (8)/K
-40 to +100 -55 to +125
*1: Window material K=borosilicate glass, Q=quartz glass
*
2: Refer to “Precautions against UV light exposure.”
Note:
Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product
within the absolute maximum ratings.
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photosensitivity
S (A/W)
Short
circuit
current
Isc
100 lx
Dark
current
I
D
VR=10 mV
max.
Temp.
coeffi cient
of I
D
TCID
Rise time
tr
V
R=0 V
R
L=1 kΩ
Terminal
capacitance
Ct
V
R=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R=10 mV
Noise
equivalent
power
NEP
λp
200 nm
He-Ne
laser
633
nm
(nm) (nm)
Min.
(μA)
Typ.
(μA) (pA)
(times/°C)
(μs) (pF)
Min.
(GΩ)
Typ.
(GΩ)
(W/Hz
1/2
)
Min. Typ.
S1336-18BQ
190 to 1100
960 0.5
0.10 0.12
0.33
1 1.2
20
1.15
0.1 20 0.5 2 5.7 × 10
-15
S1336-18BK
320 to 1100
- - 0.9 1.0
S1336-5BQ
190 to 1100
0.10 0.12
4 5 30 0.2 65 0.3 1 8.1 × 10
-15
S1336-5BK
320 to 1100
--
S1336-44BQ
190 to 1100
0.10 0.12
8 10 50 0.5 150 0.2 0.6 1.0 × 10
-14
S1336-44BK
320 to 1100
--
S1336-8BQ
190 to 1100
0.10 0.12
22 28 100 1 380 0.1 0.4 1.3 × 10
-14
S1336-8BK
320 to 1100
--
These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis
and the like.
Si photodiodes S1336 series
2
Spectral response
Photosensitivity temperature characteristics
0.1
190 400 600 800 1000
0.3
0.2
(Typ. Ta =25 °C)
0.4
0.5
0.6
0.7
S1336-BK
S1336-BQ
Wavelength (nm)
Photosensitivity (A/W)
Temperature coefficient (%/°C)
190 400 600 800 1000
Wavelength (nm)
0
(Typ.)
+0.5
+1.0
-0.5
+1.5
KSPDB0098EA KSPDB0053EB
Dark current vs. reverse voltage
Dark current
Reverse voltage (V)
0.01
(Typ. Ta=25 °C)
100 fA
0.1 1 10
1 pA
10 pA
100 pA
1 nA
10 nA
S1336-8BQ/BK
S1336-18BQ/BK
S1336-5BQ/BK
S1336-44BQ/BK
KSPDB0100EA