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TSZ02201-0RCR0GZ00100-1-2
© 2014 ROHM Co., Ltd. All rights reserved.
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VCC
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μCOM
7 Circuits
Darlinton Transistor Array
BA12003B BA12003BF BA12004B BA12004BF
General Description
BA12003B/BF,BA12004B/BFare darlinton transistor array
consist of 7circuits, input resistor to limit base current and
output surge absorpti on cla mp diode.
Features
■ Built-i n 7 circui t s
■ High output break down voltage
■ High DC output current gain
■ Built-i n input res ist or to limit ba se curren t
■ Built-in output surge absorption clamp diode
Applications
■ Motor Drivers
■ LED Drivers
■ Solenoid Drivers
■ Low Side Switch
Typic al Application Circuit
Key Specifications
■ Output break down voltage: VCE=60V(max)
■ Output current: Io=500mA/ch(max)
■ Operating supply voltage range: -0.5V to +30V
■ Operating temperature range: -40°C to +85°C
■ DC current gain: hfe=1000(min)
■ Input resistor:
BA12003B/BF Rin=2.7kΩ
BA12004B/BF Rin=10.5kΩ
Packages W(Typ) x D(Typ) x H(Max)
DIP16 19.40mm x 6.50mm x 7.95mm
SOP16 10.00mm x 6.20mm x 1.71mm
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Product structure: Silicon monolithic integrated circuit
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This product has not designed protection against radioactive rays
BA12003B / BA12004B
BA12003BF / BA12004BF
Not Recommended for
New Designs