HS1AFL - HS1MFL
Taiwan Semiconductor
1 Version:A1804
1A, 50V - 1000V High Efficient Surface Mount Rectifier
FEATURES
● Glass passivated junction chip
● Ideal for automated placement
● Low profile package
● Low power loss, high efficiency
● Fast switching for high efficiency
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer
and telecommunication.
MECHANICAL DATA
● Case: SOD-123FL
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 0.019 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
I
F
1
A
V
RRM
50 - 1000
V
I
FSM
30
A
T
J MAX
150
°C
Package
SOD-123FL
SOD-123FL
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
HS1A
FL
HS1B
FL
HS1D
FL
HS1F
FL
HS1G
FL
HS1J
FL
HS1K
FL
HS1M
FL
UNIT
Marking code on the
device
HAF
HBF
HDF
HFF
HGF
HJF
HKF
HMF
Repetitive peak reverse
voltage
V
RRM
50
100
200
300
400
600
800
1000
V
Reverse voltage, total rms
value
V
R(RMS)
35
70
140
210
280
420
560
700
V
Forward current
I
F
1
A
Surge peak forward
current, 8.3 ms single half
sine-wave superimposed
on rated load per diode
I
FSM
30
A
Junction temperature
T
J
- 55 to +150
°C
Storage temperature
T
STG
- 55 to +150
°C
HS1AFL - HS1MFL
Taiwan Semiconductor
2 Version:A1804
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP.
UNIT
Junction-to-lead thermal resistance per diode
R
ӨJL
17
°C/W
Junction-to-ambient thermal resistance per diode
R
ӨJA
85
°C/W
Junction-to-case thermal resistance per diode
R
ӨJC
19
°C/W
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Forward voltage per diode
(1)
HS1AFL
HS1BFL
HS1DFL
HS1FFL
I
F
= 0.5A, T
J
= 25°C
V
F
0.82
-
V
I
F
= 1.0A, T
J
= 25°C
0.89
0.95
V
I
F
= 0.5A, T
J
= 125°C
0.67
-
V
I
F
= 1.0A, T
J
= 125°C
0.75
0.81
V
Forward voltage per diode
(1)
HS1GFL
I
F
= 0.5A, T
J
= 25°C
V
F
0.93
-
V
I
F
= 1.0A, T
J
= 25°C
1.01
1.30
V
I
F
= 0.5A, T
J
= 125°C
0.74
-
V
I
F
= 1.0A, T
J
= 125°C
0.85
1.10
V
Forward voltage per diode
(1)
HS1JFL
HS1KFL
HS1MFL
I
F
= 0.5A, T
J
= 25°C
V
F
1.21
-
V
I
F
= 1.0A, T
J
= 25°C
1.36
1.70
V
I
F
= 0.5A, T
J
= 125°C
0.94
-
V
I
F
= 1.0A, T
J
= 125°C
1.10
1.38
V
Reverse current @ rated V
R
per diode
(2)
T
J
= 25°C
I
R
-
5
µA
T
J
= 125°C
-
150
µA
Junction capacitance
HS1AFL
HS1BFL
HS1DFL
HS1FFL
HS1GFL
1 MHz, V
R
=4.0V
C
J
11
-
pF
HS1JFL
HS1KFL
HS1MFL
6
-
pF
Reverse recovery time
HS1AFL
HS1BFL
HS1DFL
HS1FFL
HS1GFL
I
F
=0.5A ,I
R
=1.0A
I
RR
=0.25A
t
rr
-
50
ns
HS1JFL
HS1KFL
HS1MFL
t
rr
-
75
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms