DL5221C~DL5267C
Excel Semiconductor
www.excel-semi.com Rev. 3h, 12-Jul-2011
FaxBack +86-512-67606917 1/4
Zener diode
F
eatures
1. High reliability
2. Very sharp reverse characteristic
3. Low reverse current level
4. V
Z
-tolerance±2%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25 ℃
Parameter Test Conditions Type Symbol Value Unit
Power dissipation T
amb
≤75℃ P
V
500 mW
Z-current I
Z
P
V
/V
Z
mA
Junction temperature T
j
200 ℃
Storage temperature range T
stg
-65~+200 ℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25 ℃
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage I
F
=200mA V
F
1.1 V
DL5221C~DL5267C
Excel Semiconductor
www.excel-semi.com Rev. 3h, 12-Jul-2011
FaxBack +86-512-67606917 2/4
Type
V
Znom
1)
I
ZT
for r
zjT
r
zjK
at I
ZK
I
R
at V
R
TK
VZ
V
mA
Ω
Ω
mA
μA
V
%/K
DL5221C
2.4
20
<30
<1200
0.25
<100
1.0
<-0.085
DL5222C
2.5
20
<30
<1250
0.25
<100
1.0
<-0.085
DL5223C
2.7
20
<30
<1300
0.25
<75
1.0
<-0.080
DL5224C
2.8
20
<30
<1400
0.25
<75
1.0
<-0.080
DL5225C
3.0
20
<29
<1600
0.25
<50
1.0
<-0.075
DL5226C
3.3
20
<28
<1600
0.25
<25
1.0
<-0.070
DL5227C
3.6
20
<24
<1700
0.25
<15
1.0
<-0.065
DL5228C
3.9
20
<23
<1900
0.25
<10
1.0
<-0.060
DL5229C
4.3
20
<22
<2000
0.25
<5
1.0
<+0.055
DL5230C
4.7
20
<19
<1900
0.25
<5
2.0
<+0.030
DL5231C
5.1
20
<17
<1600
0.25
<5
2.0
<+0.030
DL5232C
5.6
20
<11
<1600
0.25
<5
3.0
<+0.038
DL5233C
6.0
20
<7
<1600
0.25
<5
3.5
<+0.038
DL5234C
6.2
20
<7
<1000
0.25
<5
4.0
<+0.045
DL5235C
6.8
20
<5
<750
0.25
<3
5.0
<+0.050
DL5236C
7.5
20
<6
<500
0.25
<3
6.0
<+0.058
DL5237C
8.2
20
<8
<500
0.25
<3
6.5
<+0.062
DL5238C
8.7
20
<8
<600
0.25
<3
6.5
<+0.065
DL5239C
9.1
20
<10
<600
0.25
<3
7.0
<+0.068
DL5240C
10
20
<17
<600
0.25
<3
8.0
<+0.075
DL5241C
11
20
<22
<600
0.25
<2
8.4
<+0.076
DL5242C
12
20
<30
<600
0.25
<1
9.1
<+0.077
DL5243C
13
9.5
<13
<600
0.25
<0.5
9.9
<+0.079
DL5244C
14
9.0
<15
<600
0.25
<0.1
10
<+0.082
DL5245C
15
8.5
<16
<600
0.25
<0.1
11
<+0.082
DL5246C
16
7.8
<17
<600
0.25
<0.1
12
<+0.083
DL5247C
17
7.4
<19
<600
0.25
<0.1
13
<+0.084
DL5248C
18
7.0
<21
<600
0.25
<0.1
14
<+0.085
DL5249C
19
6.6
<23
<600
0.25
<0.1
15
<+0.086
DL5250C
20
6.2
<25
<600
0.25
<0.1
16
<+0.086
DL5251C
22
5.6
<29
<600
0.25
<0.1
17
<+0.087
DL5252C
24
5.2
<33
<600
0.25
<0.1
18
<+0.088
DL5253C
25
5.0
<35
<600
0.25
<0.1
19
<+0.089
DL5254C
27
4.6
<41
<600
0.25
<0.1
21
<+0.090
DL5255C
28
4.5
<44
<600
0.25
<0.1
21
<+0.091
DL5256C
30
4.2
<49
<600
0.25
<0.1
23
<+0.091
DL5257C
33
3.8
<58
<700
0.25
<0.1
25
<+0.092
DL5258C
36
3.4
<70
<700
0.25
<0.1
27
<+0.093
DL5259C
39
3.2
<80
<800
0.25
<0.1
30
<+0.094
DL5260C
43
3.0
<93
<900
0.25
<0.1
33
<+0.095
DL5261C
47
2.7
<105
<1000
0.25
<0.1
36
<+0.095
DL5262C
51
2.5
<125
<1100
0.25
<0.1
39
<+0.096
DL5263C
56
2.2
<150
<1300
0.25
<0.1
43
<+0.096
DL5264C
60
2.1
<170
<1400
0.25
<0.1
46
<+0.097
DL5265C
62
2.0
<185
<1400
0.25
<0.1
47
<+0.097
DL5266C
68
1.8
<230
<1600
0.25
<0.1
52
<+0.097
DL5267C
75
1.7
<270
<1700
0.25
<0.1
58
<+0.098
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(T
L
)at 30 ℃,
9.5mm(3/8”) from the diode body.