DL5221B~DL5271B
Excel Semiconductor
www.excel-semi.com Rev. 3h, 12-Jul-2011
FaxBack +86-512-67606917 1/4
Zener diode
F
eatures
1. High reliability
2. Very sharp reverse characteristic
3. Low reverse current level
4. V
Z
-tolerance±5%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25 ℃
Parameter Test Conditions Type Symbol Value Unit
Power dissipation T
amb
≤75℃ P
V
500 mW
Z-current I
Z
P
V
/V
Z
mA
Junction temperature T
j
200 ℃
Storage temperature range T
stg
-65~+200 ℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25 ℃
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage I
F
=200mA V
F
1.1 V
DL5221B~DL5271B
Excel Semiconductor
www.excel-semi.com Rev. 3h, 12-Jul-2011
FaxBack +86-512-67606917 2/4
Type
V
Znom
1)
I
ZT
for r
zjT
r
zjK
at I
ZK
I
R
at V
R
TK
VZ
V
mA
Ω
Ω
mA
μA
V
%/K
DL5221B
2.4
20
<30
<1200
0.25
<100
1.0
<-0.085
DL5222B
2.5
20
<30
<1250
0.25
<100
1.0
<-0.085
DL5223B
2.7
20
<30
<1300
0.25
<75
1.0
<-0.080
DL5224B
2.8
20
<30
<1400
0.25
<75
1.0
<-0.080
DL5225B
3.0
20
<29
<1600
0.25
<50
1.0
<-0.075
DL5226B
3.3
20
<28
<1600
0.25
<25
1.0
<-0.070
DL5227B
3.6
20
<24
<1700
0.25
<15
1.0
<-0.065
DL5228B
3.9
20
<23
<1900
0.25
<10
1.0
<-0.060
DL5229B
4.3
20
<22
<2000
0.25
<5
1.0
<+0.055
DL5230B
4.7
20
<19
<1900
0.25
<5
2.0
<+0.030
DL5231B
5.1
20
<17
<1600
0.25
<5
2.0
<+0.030
DL5232B
5.6
20
<11
<1600
0.25
<5
3.0
<+0.038
DL5233B
6.0
20
<7
<1600
0.25
<5
3.5
<+0.038
DL5234B
6.2
20
<7
<1000
0.25
<5
4.0
<+0.045
DL5235B
6.8
20
<5
<750
0.25
<3
5.0
<+0.050
DL5236B
7.5
20
<6
<500
0.25
<3
6.0
<+0.058
DL5237B
8.2
20
<8
<500
0.25
<3
6.5
<+0.062
DL5238B
8.7
20
<8
<600
0.25
<3
6.5
<+0.065
DL5239B
9.1
20
<10
<600
0.25
<3
7.0
<+0.068
DL5240B
10
20
<17
<600
0.25
<3
8.0
<+0.075
DL5241B
11
20
<22
<600
0.25
<2
8.4
<+0.076
DL5242B
12
20
<30
<600
0.25
<1
9.1
<+0.077
DL5243B
13
9.5
<13
<600
0.25
<0.5
9.9
<+0.079
DL5244B
14
9.0
<15
<600
0.25
<0.1
10
<+0.082
DL5245B
15
8.5
<16
<600
0.25
<0.1
11
<+0.082
DL5246B
16
7.8
<17
<600
0.25
<0.1
12
<+0.083
DL5247B
17
7.4
<19
<600
0.25
<0.1
13
<+0.084
DL5248B
18
7.0
<21
<600
0.25
<0.1
14
<+0.085
DL5249B
19
6.6
<23
<600
0.25
<0.1
15
<+0.086
DL5250B
20
6.2
<25
<600
0.25
<0.1
16
<+0.086
DL5251B
22
5.6
<29
<600
0.25
<0.1
17
<+0.087
DL5252B
24
5.2
<33
<600
0.25
<0.1
18
<+0.088
DL5253B
25
5.0
<35
<600
0.25
<0.1
19
<+0.089
DL5254B
27
4.6
<41
<600
0.25
<0.1
21
<+0.090
DL5255B
28
4.5
<44
<600
0.25
<0.1
21
<+0.091
DL5256B
30
4.2
<49
<600
0.25
<0.1
23
<+0.091
DL5257B
33
3.8
<58
<700
0.25
<0.1
25
<+0.092
DL5258B
36
3.4
<70
<700
0.25
<0.1
27
<+0.093
DL5259B
39
3.2
<80
<800
0.25
<0.1
30
<+0.094
DL5260B
43
3.0
<93
<900
0.25
<0.1
33
<+0.095
DL5261B
47
2.7
<105
<1000
0.25
<0.1
36
<+0.095
DL5262B
51
2.5
<125
<1100
0.25
<0.1
39
<+0.096
DL5263B
56
2.2
<150
<1300
0.25
<0.1
43
<+0.096
DL5264B
60
2.1
<170
<1400
0.25
<0.1
46
<+0.097
DL5265B
62
2.0
<185
<1400
0.25
<0.1
47
<+0.097
DL5266B
68
1.8
<230
<1600
0.25
<0.1
52
<+0.097
DL5267B
75
1.7
<270
<1700
0.25
<0.1
58
<+0.098
DL5268B
82
1.5
<330
<2000
0.25
<0.1
62
<+0.098
DL5269B
87
1.4
<370
<2200
0.25
<0.1
68
<+0.099
DL5270B
91
1.4
<400
<2300
0.25
<0.1
69
<+0.099
DL5271B
100
1.3
<500
<2600
0.25
<0.1
76
<+0.11
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(T
L
) at 30℃,
9.5mm (3/8”) from the diode body.