DL4728C~DL4764C
Excel Semiconductor
www.excel-semi.com Rev. 3h, 12-Jul-2011
FaxBack +86-512-67606917 1/4
Zener diode
F
eatures
1. High reliability
2. Very sharp reverse characteristic
3. Low reverse current level
4. V
Z
-tolerance±2%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25 ℃
Parameter Test Conditions Type Symbol Value Unit
Power dissipation T
amb
≤50℃ P
V
1 W
Z-current I
Z
P
V
/V
Z
mA
Junction temperature T
j
200 ℃
Storage temperature range T
stg
-65~+175 ℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25 ℃
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage I
F
=200mA V
F
1.2 V
DL4728C~DL4764C
Excel Semiconductor
www.excel-semi.com Rev. 3h, 12-Jul-2011
FaxBack +86-512-67606917 2/4
Type
V
Znom
1)
I
ZT
for r
zjT
r
zjK
at I
ZK
I
R
at V
R
V
mA
Ω
Ω
mA
μA
V
DL4728C
3.3
76
<10
<400
1
<100
1
DL4729C
3.6
69
<10
<400
1
<100
1
DL4730C
3.9
64
<9
<400
1
<50
1
DL4731C
4.3
58
<9
<400
1
<10
1
DL4732C
4.7
53
<8
<500
1
<10
1
DL4733C
5.1
49
<7
<550
1
<10
1
DL4734C
5.6
45
<5
<600
1
<10
2
DL4735C
6.2
41
<2
<700
1
<10
3
DL4736C
6.8
37
<3.5
<700
1
<10
4
DL4737C
7.5
34
<4.0
<700
0. 5
<10
5
DL4738C
8.2
31
<4.5
<700
0. 5
<10
6
DL4739C
9.1
28
<5.0
<700
0. 5
<10
7
DL4740C
10
25
<7
<700
0.25
<10
7.6
DL4741C
11
23
<8
<700
0.25
<5
8.4
DL4742C
12
21
<9
<700
0.25
<5
9.1
DL4743C
13
19
<10
<700
0.25
<5
9.9
DL4744C
15
17
<14
<700
0.25
<5
11.4
DL4745C
16
15.5
<16
<700
0.25
<5
12.2
DL4746C
18
14
<20
<750
0.25
<5
13.7
DL4747C
20
12.5
<22
<750
0.25
<5
15.2
DL4748C
22
11.5
<23
<750
0.25
<5
16.7
DL4749C
24
10.5
<25
<750
0.25
<5
18.2
DL4750C
27
9.5
<35
<750
0.25
<5
20.6
DL4751C
30
8.5
<40
<1000
0.25
<5
22.8
DL4752C
33
7.5
<45
<1000
0.25
<5
25.1
DL4753C
36
7.0
<50
<1000
0.25
<5
27.4
DL4754C
39
6.5
<60
<1000
0.25
<5
29.7
DL4755C
43
6.0
<70
<1500
0.25
<5
32.7
DL4756C
47
5.5
<80
<1500
0.25
<5
35.8
DL4757C
51
5.0
<95
<1500
0.25
<5
38.8
DL4758C
56
4.5
<110
<2000
0.25
<5
42.6
DL4759C
62
4.0
<125
<2000
0.25
<5
47.1
DL4760C
68
3.7
<150
<2000
0.25
<5
51.7
DL4761C
75
3.3
<175
<2000
0.25
<5
56
DL4762C
82
3.0
<200
<3000
0.25
<5
62.2
DL4763C
91
2.8
<250
<3000
0.25
<5
69.2
DL4764C
100
2.5
<350
<3000
0.25
<5
76
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(T
L
)at 30℃,
9.5mm(3/8”) from the diode body.