1. FEATURES

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

●

ESD Protected

2. DEVICE MARKING AND ORDERING INFORMATION

3. MAXIMUM RATINGS(Ta = 25ºC)

– Steady State TA = 25°C

TA = 85°C

– t<5s TA = 25°C

TA = 85°C

Pulsed Drain Current (tp=10μs)

Source Current (Body Diode)

4. THERMAL CHARACTERISTICS

Total Device Dissipation(Note 1)

– Steady State

– t<5s

Junction−to−Ambient(Note 1)

– Steady State

– t<5s

Junction and Storage temperature

1. FR–5 = 1.0×0.75×0.062 in.

ºC−55∼+150TJ,Tstg

L2N7002KDW1T1G

S-L2N7002KDW1T1G

Small Signal MOSFET

380 mAmps, 60 Volts N–Channel SC-88

320

230

IDM 1.5

L2N7002KDW1T3G 72K 10000/Tape&Reel

Parameter Symbol Limits

Device

Gate-Source Voltage VGS ±20

380

270

Unit

Drain–Source Voltage VDSS

Marking Shipping

L2N7002KDW1T1G 72K 3000/Tape&Reel

Drain Current ID

Vdc

Vdc

mAdc

Limits

60

Unit

mW

ºC

PD

TL

420

260

417

A

IS 300 mA

Lead Temperature for Soldering

Purposes (1/8 " from case for 10 s)

ESD 2000 V

Gate−Source ESD Rating(HBM,

Method 3015)

300

RΘJA

300

ºC/W

Parameter Symbol

SC88(SOT-363)

Leshan Radio Company, LTD. Rev.F Mar 2016 1/6

L2N7002KDW1T1G, S-L2N7002KDW1T1G

Small Signal MOSFET

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )

OFF CHARACTERISTICS

Characteristic

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250μAdc)

Zero Gate Voltage Drain Current

TJ = 25°C

(VGS = 0, VDS = 60 Vdc)

TJ = 125°C

(VGS = 0, VDS = 50 Vdc)

TJ = 25°C

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

Gate–Body Leakage Current, Reverse

(VGS = - 20 Vdc)

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 250μAdc)

Negative Threshold Temperature Coefficient

Static Drain–Source On–State Resistance

(VGS = 10 Vdc, ID = 500 mAdc)

(VGS = 5.0 Vdc, ID = 50 mAdc)

Forward Transconductance

(VDS = 5.0 Vdc, ID = 200 mAdc)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

BODY–DRAIN DIODE RATINGS

Diode Forward On–Voltage TJ = 25°C

(IS = 115 mAdc, VGS = 0 V) TJ = 85°C

2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.

pF

pF

Ciss

- 34 -

Coss

Crss

- 3 -

- 2.2 -

pF

Typ. Max.

IGSSR

- - -10

Drain−to−Source Breakdown Voltage

Temperature Coefficient

VBRDSS/TJ

- -71

μAdc

μAdc

μAdc

Ω

- -

Unit

VBRDSS

Vdc

60 - -

Symbol Min.

1.0

Vdc

100

IGSSF

- - 10

- 2.3

2.5

- -

- 2.7

-

gfs

mS

80 - -

-

VGS(th)

IDSS

RDS(on)

-

1.0

-

VDS = 10 V, VGEN = 10 V,

ID = 500 mA

td(on)

td(off)

tr

tf

-

-

-

-

- 1.4

mV/ºC

500

nAdc

VGS(TH)/TJ

4- -

mV/ºC

VSD

Vdc

- 0.7 -

ns

19 -

12 -

3.8 -

3.4 -

Leshan Radio Company, LTD. Rev.F Mar 2016 2/6