1. FEATURES
●
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
●
ESD Protected
2. DEVICE MARKING AND ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC)
– Steady State
TA = 25°C
TA = 85°C
– t<5s
TA = 25°C
TA = 85°C
Pulsed Drain Current (tp=10μs)
Source Current (Body Diode)
4. THERMAL CHARACTERISTICS
Total Device Dissipation(Note 1)
– Steady State
– t<5s
Junction−to−Ambient(Note 1)
– Steady State
– t<5s
Junction and Storage temperature
1. FR–5 = 1.0×0.75×0.062 in.
A
IS
300
mA
Lead Temperature for Soldering
Purposes (1/8 " from case for 10 s)
ESD
2000
V
Gate−Source ESD Rating(HBM,
Method 3015)
300
RΘJA
300
ºC/W
Parameter
Symbol
Limits
60
Unit
mW
ºC
PD
TL
420
260
417
Unit
Drain–Source Voltage
VDSS
Marking
Shipping
L2N7002KWT1G
SK
3000/Tape&Reel
Drain Current
ID
Vdc
Vdc
mAdc
L2N7002KWT1G
S-L2N7002KWT1G
Small Signal MOSFET
380 mAmps, 60 Volts N–Channel SC-70
320
230
IDM
1.5
L2N7002KWT3G
SK
10000/Tape&Reel
Parameter
Symbol
Limits
Device
Gate-Source Voltage
VGS
±20
380
270
ºC
−55∼+150
TJ,Tstg
SC70(SOT-323)
Leshan Radio Company, LTD. Rev.E Mar 2016
1/6
L2N7002KWT1G, S-L2N7002KWT1G
Small Signal MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250μAdc)
Zero Gate Voltage Drain Current
TJ = 25°C
(VGS = 0, VDS = 60 Vdc)
TJ = 125°C
(VGS = 0, VDS = 50 Vdc)
TJ = 25°C
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = - 20 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250μAdc)
Negative Threshold Temperature Coefficient
Static Drain–Source On–State Resistance
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Forward Transconductance
(VDS = 5.0 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage TJ = 25°C
(IS = 115 mAdc, VGS = 0 V) TJ = 85°C
2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
-
1.4
mV/ºC
500
nAdc
VGS(TH)/TJ
4
-
-
mV/ºC
VSD
Vdc
-
0.7
-
ns
19
-
12
-
3.8
-
3.4
-
VDS = 10 V, VGEN = 10 V,
ID = 500 mA
td(on)
td(off)
tr
tf
-
-
-
-
RDS(on)
-
1.0
-
-
2.3
2.5
-
-
-
2.7
-
gfs
mS
80
-
-
-
VGS(th)
IDSS
μAdc
μAdc
μAdc
Ω
-
-
Unit
VBRDSS
Vdc
60
-
-
Symbol
Min.
1.0
Vdc
100
IGSSF
-
-
10
Typ.
Max.
IGSSR
-
-
-10
Drain−to−Source Breakdown Voltage
Temperature Coefficient
VBRDSS/TJ
-
-
71
pF
pF
Ciss
-
34
-
Coss
Crss
-
3
-
-
2.2
-
pF
Leshan Radio Company, LTD. Rev.E Mar 2016
2/6