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Formosa MS
SMD Switching Diode
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List
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
Mechanical data...............................................................................
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
BAV19WS THRU BAV21WS
Document ID Issued Date Revised Date Revision Page.
DS-221917 2008/02/10 2012/04/09 C 7
200mA
-100V-200V
Surface Mount
Switching Diode
Silicon epitaxial planar chip.
Features
Lead-free parts meet RoHS requirments.
.
• Suffix "-H" indicates Halogen-free parts, ex. BAV19WS-H
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Low Reverse Current.
Surface Mount Package Ideally Suited for Automatic Insertion.
Fast Switching Speed.
For General Purpose Switching Applications.
Package outline
Page 2
Formosa MS
PARAMETER
CONDITIONS Symbol
BAV19WS
BAV20WS
BAV21WS
UNIT
mA
Average rectified output current(1)
@t = 8.3ms
V
R
I
O
R
θJA
-55 ~ +150
V
o
C
o
C
Typical Thermal resistance
I = 100 mA
F
Forward voltageMaximum
T
J
T
STG
Storage temperature range
P
D
Non-repetitive peak forward surge current
Power dissipation
I = I = 30mA , I = 0.1 X I , R = 100
FR RR R L OHM
V = 0 V , f = 1.0MHz
R
V
F
I
R
pF
ns
Junction to ambient air(1)
-55 ~ +150
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
SMD Switching Diode
Non-repetitive peak reverse voltage
V
RRM
250
Reverse leakage currentMaximum
Total capacitanceMaximum
Reverse recovery timeMaximum
I = 200 mA
F
@ Working Peak Reverse Voltage
Working Peak Reverse Voltage
I
FSM
C
J
t
rr
nA
V
°C/W
V
A
mW
200120
200150100
200
1.7
200
625
1.00
1.25
100
5.0
50
Document ID Issued Date Revised Date Revision Page.
BAV19WS THRU BAV21WS
Dimensions in inches and (millimeters)
SOD-323F
0.039(1.00)
0.031(0.80)
0.071(1.80)
0.063(1.60)
0.053(1.35)
0.045(1.15)
0.016(0.40)
0.010(0.25)
0.106(2.70)
0.091(2.30)
0.003(0.08)
0.016(0.40)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic,
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight :
•
•
•
•
•
•
SOD-323F
Approximated 0.005 gram
Note 1. Valid provided that electrodes are kept at ambient temperature.
junction temperature rangeOperating
Maximum ratings and Electrical Characteristics (AT T =25
A
o
C unless otherwise noted)
DS-221917 2008/02/10 2012/04/09 C 7
RMS Reverse Voltage
V
R(RMS)
V
140105
70
Peak Forward Surge Current
I
FRM
625
mA