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Formosa MS
SMD Switching Diode
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List
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
Mechanical data...............................................................................
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
BAV19W THRU BAV21W
Document ID Issued Date Revised Date Revision Page.
DS-221923 2009/02/10 2014/10/28
D 7
200mA
-100V-200V
Surface Mount
Switching Diode
Fast speed switching.
For general purpose switching application.
High conductance.
Silicon epitaxial planar chip
Features
Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen-free parts, ex. BAV19W-H
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Package outline
Page 2
Formosa MS
PARAMETER
CONDITIONS Symbol
BAV19W
BAV20W
BAV21W
UNIT
mA
mA
Peak repetitive reverse voltageMaximum
Working peak reverse voltageMaximum
(1)Maximum Forward Continous Current
Average rectified output current(1)Maximum
junction temperature rangeOperating
@t = 1.0 sm
V
R
V
RRM
I
O
I
FM
R
θJA
-55 to +150
V
o
C
o
C
Typical Thermal resistance
I = 100 mA
F
Forward voltageMaximum
T
J
T
STG
Storage temperature range
P
D
Non-repetitive peak forward
surge current
Maximum
Power dissipationMaximum
I = I = 30mA , I = 0.1 X I , R = 100
FR RR R L OHM
V = 0 V , f = 1.0MHz
R
V
F
I
R
pF
ns
Junction to ambient air(1)
-55 to +150
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
SMD Switching Diode
Non-repetitive peak reverse voltageMaximum
V
RM
250
Reverse leakageMaximum
Total capacitanceMaximum
Reverse recovery timeMaximum
I = 200 mA
F
@rated DC blocking voltage, T =25°C
T =100°C
J
J
@t = 1.0 s
DC blocking voltageMaximum
V
RWM
I
FSM
C
J
t
rr
nA
V
o
C/W
V
A
mW
200120
200150100
400
200
0.5
2.5
250
500
1.0
1.25
100
15
5.0
50
Note 1. Valid provided that electrodes are kept at ambient temperature.
Dimensions in inches and (millimeters)
SOD-123F
0.053(1.35)
0.037(0.95)
0.110(2.80)
0.098(2.50)
0.071(1.80)
0.055(1.40)
0.028(0.70)
0.019(0.50)
0.154(3.90)
0.141(3.60)
0.008(0.20)MAX
Mechanical data
Epoxy:UL94-VO rated flame retardant
Case : Molded plastic,
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.010 gram
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SOD-123F
Approximated
BAV19W THRU BAV21W
Document ID Issued Date Revised Date Revision Page.
uA
Maximum ratings and Electrical Characteristics (AT T =25
A
o
C unless otherwise noted)
@T = 25 C
A °
V
Maximum RMS Reverse Voltage
V
R(RMS)
14010570
DS-221923 2009/02/10 2014/10/28 D 7